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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AO5803E
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| OCR Text |
...lized on-resistance v gs =-4.5v id=-0.6a v gs =-1.8v id=-0.4a 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 2 4 6 8 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) ( w w w w ) 25c 125c v ds =-5v v gs =-1.8v v gs =-4.5v i d =-0... |
| Description |
Dual P-Channel Enhancement Mode Field Effect Transistor
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| File Size |
431.19K /
5 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AO4822A
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| OCR Text |
...r d(on) t on t d(off) t f t off id + l vgs vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar...6/6 ao4822a 30v dual n-channel mosfet
... |
| Description |
30V Dual N-channel MOSFET
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| File Size |
379.99K /
6 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQPF6N90C FQP6N90C
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| OCR Text |
...te Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25C unless otherwise noted
Parameter Drain-Source Vo...6 3.8 24
FQPF6N90C 6* 3.8 * 24 * 30 650 6 16.7 4.5
Units V A A A V mJ A mJ V/ns W W/C C C
... |
| Description |
900V N-Channel Advance Q-FET C-Series
900V N-Channel MOSFET
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| File Size |
857.48K /
10 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQPF6N40CF FQP6N40CF FQP6N40CF_06 FQP6N40CF06
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| OCR Text |
...e Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Current Drain Current
Parameter
Drain-Source Voltage ...6 3.6 24
FQPF6N40CF
400 6* 3.6* 24* 30 270 6 73 4.5
Units
V A A A V mJ A mJ V/ns
73 0.58... |
| Description |
400V N-Channel MOSFET
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| File Size |
1,062.53K /
10 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQP6N40CF
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| OCR Text |
...e Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Current Drain Current
Parameter
Drain-Source Voltage ...6 3.6 24 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units
V A A A V mJ A mJ V/ns W W/C C C
Gate... |
| Description |
400V N-Channel MOSFET
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| File Size |
1,059.67K /
8 Page |
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FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQP12N20L FQP12N20 FQP12N20LJ69Z
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| OCR Text |
...te Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25C unless otherwise noted
Parameter Drain-Source Vo...6 7.35 46.4 20
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/C C C
Ga... |
| Description |
11.6 A, 200 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET
200V LOGIC N-Channel MOSFET
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| File Size |
566.44K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRHF597110 IRHF593110
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| OCR Text |
... 300K Rads (Si) RDS(on) 1.0 1.0 ID -2.6A -2.6A
IRHF597110 100V, P-CHANNEL
4#
TECHNOLOGY
c
TO-39
International Rectifier's R...6 -1.6 -10.4 15 0.12 20 30 -2.6 1.5 6.6 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ ... |
| Description |
-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
-100V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
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| File Size |
130.63K /
8 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQI6N40C FQB6N40C FQB6N40CTM FQI6N40CTU
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| OCR Text |
...te Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25C unless otherwise noted
Parameter Drain-Source Vo...6 3.6 24 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/C C C
Gate-... |
| Description |
400V N-Channel MOSFET
400V N-Channel Advance Q-FET C-Series
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| File Size |
660.38K /
9 Page |
View
it Online |
Download Datasheet |
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