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For idss. Found Datasheets File :: 28443    Search Time::2.172ms    
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    Execlics
Part No. EFA018A-70
OCR Text ...ssion f=12ghz vds=6v, ids=50% idss f=18ghz 16.5 18.5 18.5 dbm g 1db gain at 1db compression f=12ghz vds=6v, ids=50% idss f=18ghz 9.0 10.5 8.0 db pae power added efficiency at 1db compression vds=6v, ids=50% idss f=1...
Description Low Distortion GaAs Power FET

File Size 48.62K  /  2 Page

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    EMP107-Q5

Excelics Semiconductor, Inc.
Part No. EMP107-Q5
OCR Text ...ch tone pout 14dbm, 7v, 60%+ 10%idss -40 -37 dbc input rl input return loss -10 db output rl output return loss -5 db idss saturate drain current v ds =3v, v gs =0v 240 310 370 ma v dd ...
Description 5.8 - 8.0 GHz Surface-Mounted PA

File Size 135.75K  /  4 Page

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    Excelics Semiconductor
Part No. EIA1011-4P
OCR Text ....7 - 11.7ghz vds=8v, idsq=0.5 idss(eia), 0.6idss(eib) 35.5 36.5 35 35.5 dbm g 1db gain at 1db compression f =10.7 - 11.7ghz vds=8v, idsq=0.5 idss(eia), 0.6idss(eib) 8 9 7 8 db pae powe...
Description 10.7-11.7GHz 4W Internally Matched Power FET

File Size 43.89K  /  1 Page

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    MMSF3350-D

ON Semiconductor
Part No. MMSF3350-D
OCR Text ...igh Speed, With Soft Recovery * IDSS Specified at Elevated Temperature * Avalanche Energy Specified * Miniature SO-8 Surface Mount Package - Saves Board Space SINGLE TMOS POWER MOSFET 30 VOLTS RDS(on) = 11 mW D G S MARKING DIAGRAM...
Description WaveFETE HDTMOSE Single N-Channel Field Effect Transistor Power Surface Mount Products

File Size 137.16K  /  12 Page

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    BUK109-50GS

NXP Semiconductors
Philips
Part No. BUK109-50GS
OCR Text ...cified SYMBOL V(CL)DSS V(CL)DSS IDSS IDSS IDSS RDS(ON) PARAMETER Drain-source clamping voltage Drain-source clamping voltage CONDITIONS VIS = 0 V; ID = 10 mA MIN. 50 TYP. 0.5 1 10 35 45 MAX. 70 10 20 100 50 60 UNIT V V A A A m m VIS = 0 ...
Description    PowerMOS transistor TOPFET
PowerMOS transistor TOPFET(功率MOS晶体管TOPFET)

File Size 117.03K  /  12 Page

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    Vishay
Part No. BF961
OCR Text ...V(BR)G1SS V(BR)G2SS IG1SS IG2SS IDSS IDSS IDSS -VG1S(OFF) -VG2S(OFF) 4 4 9.5 Min 20 8 8 Typ Max Unit V V V nA nA mA mA mA V V 14 14 100 100 20 10.5 20 3.5 3.5 Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage VDS = 15...
Description N-Channel Dual Gate MOS&dash;Fieldeffect Tetrode, Depletion Mode

File Size 137.49K  /  7 Page

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    Agilent(Hewlett-Packard...
Agilent (Hewlett-Packard)
Part No. ATF-34143-BLK ATF-34143-TR1 ATF-34143-TR2 ATF34143
OCR Text ... C/W Absolute Maximum 5.5 -5 -5 Idss [3] 725 17 160 -65 to 160 165 Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Assumes DC quiescent conditions. 3. VGS = 0 volts. 4. Source lead temper...
Description Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

File Size 149.96K  /  15 Page

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    NTP75N03-06-D NTP75N03-06/D

ON Semiconductor
Part No. NTP75N03-06-D NTP75N03-06/D
OCR Text ...ized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperatures High Avalanche Energy Specified ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0 Power Supplies Inductive Loads PWM Motor Controls Replaces MTP1306 and ...
Description Power MOSFET 75 Amps30 Volts
Power MOSFET 75 Amps, 30 Volts N-Channel TO-220 and D2PAK

File Size 58.81K  /  8 Page

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    http://
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
Part No. KA5S KA5S0965-YDTU KA5S09654QT-YDTU KA5S12656-YDTU KA5S0765C-YDTU KA5S1265-YDTU KA5S1265-TU KA5S09654QT-TU FAIRCHILDSEMICONDUCTORCORP-KA5S1265-YDTU KA5S0965-TU KA5S12656TU KA5S12656YDTU KA5S1265TU KA5S1265YDTU
OCR Text ...ecified) Parameter Symbol BVDSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDD=0.5BVDSS, ID=7.0A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=7.0A, VDS=0.5BVDSS(MOSFET Switchi...
Description Fairchild Power Switch(FPS) 49 A SWITCHING REGULATOR, 150 kHz SWITCHING FREQ-MAX, PSFM5
ACB 6C 6#16S PIN PLUG
AC 6C 6#16S SKT PLUG
AC 2C 2#16S SKT PLUG

File Size 256.44K  /  20 Page

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    Agilent (Hewlett-Packard)
Part No. DEMO-ATF3X14-32 ATF-38143
OCR Text ... C/W Absolute Maximum 4.5 -4 -4 Idss 580 17 160 -65 to 160 165 Notes: 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Source lead temperature is 25C. Derate 6 mW/C for TL > 64C. 3. Thermal resis...
Description DEMO-ATF3X14-32 · Demonstration circuit board for ATF-34143, ATF-35143 and ATF-38143 (2 GHz)
ATF-38143 · SC-70 (SOT-343) Low Noise 22 dBm OIP3

File Size 128.20K  /  13 Page

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