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For jfet-input Found Datasheets File :: 1919 Search Time::3.547ms
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				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT8058HVR
OCR Text	...is new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster sw...Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT8058HVR...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 13.5A 0.580 Ohm
File Size	60.35K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8065BVFR APT10M11B2VR APT20M22B2VR APT8065
OCR Text	...is new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster sw...Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT8065BVF...
Description	POWER MOS V 800V 13A 0.650 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	63.14K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8065BVR APT8065 APT8065AVR
OCR Text	...is new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster sw...Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT8065BVR...
Description	POWER MOS V 800V 13A 0.650 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.69K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8065SVR
OCR Text	...is new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster sw...Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT8065SVR...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 800V 13A 0.650 Ohm
File Size	63.31K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8065 APT8065AVR
OCR Text	...is new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster sw...Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT8065AVR...
Description	POWER MOS V 800V 11.5A 0.650 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.68K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8067HVR
OCR Text	...is new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster sw...Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT8067HVR...
Description	POWER MOS V 800V 11.5A 0.670 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.92K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8075BVFR
OCR Text	...is new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster sw...Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT8075BVF...
Description	POWER MOS V 800V 12A 0.750 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	69.90K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology]
Part No.	APT8075BVR APT8075
OCR Text	...is new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster sw...Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT8075BVR...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 800V 12A 0.750 Ohm
File Size	61.94K / 4 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola Inc] ONSEMI[ON Semiconductor] Motorola, Inc
Part No.	C34080BD MC34080 MC34080BP MC34081BD MC34081BP MC34082P MC34083BP MC34084DW MC34084P MC34084PM MC34085BDW MC34085BP MC34085 ON1098
OCR Text	JFET Input Operational Amplifiers These devices are a new generation of high speed JFET input monolithic operational amplifiers. Innovative design concepts along with JFET technology provide wide gain bandwidth product and high slew rate. ...
Description	From old datasheet system HIGH PERFORMANCE JFET INPUT OPERATIONAL AMPLIFIERS
File Size	279.06K / 16 Page	View it Online	Download Datasheet

				MICREL[Micrel Semiconductor]
Part No.	MPD8021 MIC8021-0002 MIC8021-0001
OCR Text	..................... 8 Expitaxial JFET ................................................................. 1 200 and 10 high-voltage DMOS transi...input protection structures ........................................ 2 High-value resistor (100k) .....
Description	Semicustom High-Voltage Array Summary Information
File Size	36.72K / 2 Page	View it Online	Download Datasheet

For jfet-input Found Datasheets File :: 1919 Search Time::3.547ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |