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Advanced Power Technology
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| Part No. |
APT50M38JLL
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| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 0.87mH, R = 25W, Peak I = 91A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
t...810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202
Gate
5,182,234 5,231,474
5,019,522 5,... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
51.38K /
2 Page |
 View
it Online |
Download Datasheet
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ADPOW[Advanced Power Technology]
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| Part No. |
APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL
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| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 1.27mH, R = 25W, Peak I = 71A j G L 5 dv/ numbers reflect the limitations of the test circuit rather tha...810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202
Gate
5,182,234 5,231,474
5,019,522 5,... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
58.44K /
2 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
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| Part No. |
APT50M50JLC APT5010JLC
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| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 1.21mH, R = 25W, Peak I = 77A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
t...810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202
Gate
5,182,234 5,231,474
5,019,522 5,... |
| Description |
POWER MOS VI 500V 77A 0.050 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
34.93K /
2 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT50M50JVFR
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| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 1.21mH, R = 25, Peak I = 77A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, dt...810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095
"UL... |
| Description |
POWER MOS V 500V 77A 0.050 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
73.13K /
4 Page |
View
it Online |
Download Datasheet |
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Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
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| Part No. |
APT50M50JVR
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| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 1.21mH, R = 25, Peak I = 77A j G L
APT Reserves the right to change, without notice, the specificatio...810 5,256,583 5,045,903 4,748,103 5,089,434 5,283,202 5,182,234 5,231,474 5,019,522 5,434,095
"UL... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 77A 0.050 Ohm
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| File Size |
70.86K /
4 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT50M50L2FLL
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| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 0.81mH, R = 25W, Peak I = 89A j G L 5 dv/ numbers reflect the limitations of the test circuit rather tha...810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,43... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
52.74K /
2 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT50M50L2LL
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| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 0.85mH, R = 25W, Peak I = 87A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
t...810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,43... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
50.41K /
2 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT50M60L2VFR
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| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 1.08mH, R = 25W, Peak I = 77A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
t...810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,43... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
60.66K /
2 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT50M60L2VR
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| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 1.08mH, R = 25W, Peak I = 77A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
t...810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,43... |
| Description |
POWER MOS V 500V 77A 0.060 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
33.79K /
2 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT50M65 APT50M65B2FLL APT50M65LFLL
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| OCR Text |
...ethod 3471 4 Starting T = +25C, L = 1.34mH, R = 25W, Peak I = 67A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
t...810 5,256,583
5,045,903 4,748,103
5,089,434 5,283,202
5,182,234 5,231,474
5,019,522 5,43... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
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| File Size |
53.95K /
2 Page |
View
it Online |
Download Datasheet |
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