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For low-curent Found Datasheets File :: 2161 Search Time::1.14ms
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				Kersemi Electronic Co., Ltd. Kersemi Electronic Co., Ltd...
Part No.	IRF1404LPBF IRF1404SPBF
OCR Text	...techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized de...curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet ? power mosfets ...
Description	HEXFET? Power MOSFET
File Size	3,880.58K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF640L IRF640S
OCR Text	Low-profile through-hole (IRF640L) Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating 150C Operating Temperature Fast Switching Fully A...Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig ...
Description	Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=18A) Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A) HEXFET? Power MOSFET
File Size	224.71K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF640N IRF640NL IRF640NS
OCR Text	...techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized devi...Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig ...
Description	Power MOSFET(Vdss=200V/ Rds(on)=0.15ohm/ Id=18A) Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)
File Size	153.14K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFBA90N20 IRFBA90N20D
OCR Text	...x 0.023 ID 98A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective CO...Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig ...
Description	Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A?? Power MOSFET(Vdss=200V/ Rds(on)max=0.023ohm/ Id=98A) Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A) Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A?) Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A?
File Size	97.19K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFR15N20D IRFU15N20D
OCR Text	...x 0.165 ID 17A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective CO...Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig ...
Description	SMPS MOSFET
File Size	180.49K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRL2910 L2910
OCR Text	Low On-Resistance l Dynamic dv/dt Rating l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l D VDSS...Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig ...
Description	RES THICK FILM POWER 10 OHM 5W HEXFET Power MOSFET
File Size	120.70K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRL5602S IRF530S IRL5602STRR IRL5602STRL
OCR Text	...techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized devi...Curent Body Diode Forward Drop Ripple 5% [ISD ] *** VGS = 5.0V for Logic Level and 3...
Description	-20V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
File Size	169.26K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLBA1304 IRLBA1304P
OCR Text	Low On-Resistance Same outline as TO-220 50% greater current in typ. application conditions vs. TO-220 Fully Avalanche Rated Purchase IRLBA...Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig ...
Description	HEXFET? Power MOSFET
File Size	103.65K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLI2910
OCR Text	Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Desc...Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig ...
Description	HEXFET Power MOSFET
File Size	140.03K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRFP250N IRFP250
OCR Text	...techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized devi...Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig ...
Description	Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) N-Channel(Hexfet Transistors) Power MOSFET(Vdss = 200 V Rds(on)=0.075ohm Id=30A) Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) 功率MOSFET（减振钢板基本\u003d 200第五的Rdson）\u003d 0.075ohm，身份证\u003d 30A条）
File Size	120.07K / 8 Page	View it Online	Download Datasheet

For low-curent Found Datasheets File :: 2161 Search Time::1.14ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |