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				International Rectifier
Part No.	IRF3315
OCR Text	...ntegral reverse --- --- 108 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 12A, VGS = 0V --- 174 260 ns TJ = 25C, IF = 12A --- 1.2 1.7 ...Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characterist...
Description	Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)
File Size	121.12K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3415L IRF3415S
OCR Text	...ntegral reverse --- --- 150 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 22A, VGS = 0V --- 260 390 ns TJ = 25C, IF = 22A --- 2.2 3.3 ...Gate-to-Source Voltage (V) TJ , Junction Temperature ( oC) Fig 3. Typical Transfer Characteris...
Description	Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A) Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)
File Size	152.65K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3415
OCR Text	...howing the G integral reverse p-n junction diode. TJ = 25C, IS = 22A, VGS = 0V TJ = 25C, IF = 22A di/dt = 100A/s D S Notes: R...Gate-to-Source Voltage (V) TJ , Junction Temperature ( oC) Fig 3. Typical Transfer Characteris...
Description	Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A) Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)
File Size	90.69K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3515L IRF3515S
OCR Text	...ntegral reverse --- --- 164 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 25A, VGS = 0V --- 200 300 ns TJ = 25C, IF = 25A --- 1.6 2.4 ...Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characterist...
Description	Power MOSFET(Vdss=150V/ Rds(on)max=0.045ohm/ Id=41A) Power MOSFET(Vdss=150V, Rds(on)max=0.045ohm, Id=41A)
File Size	122.87K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF360 IRF360-15
OCR Text	...0.20 ID 25A IRF360 400V, N-CHANNEL The HEXFETtechnology is the key to International Rectifier's advanced line of power MOSFET tran...Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy...
Description	Repetitive Avalanche Ratings TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=0.20ohm/ Id=25A) TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A) 400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
File Size	138.60K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3703 IRF3703PBF
OCR Text	...wing the G integral reverse S p-n junction diode. TJ = 25C, IS = 76A, VGS = 0V TJ = 25C, IF = 76A, VDS = 16V di/dt = 100A/s 2 www.ir...Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteris...
Description	30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A? Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A) Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?) Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
File Size	93.04K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
OCR Text	...howing the G integral reverse p-n junction diode. S TJ = 25C, IS = 35.5A, VGS = 0V TJ = 125C, IS = 35.5A, VGS = 0V TJ = 25C, IF = 35.5A, V...Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characterist...
Description	20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A? Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A) Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A) Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?) Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A) CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 77A条? TRANSISTOR \| MOSFET \| N-CHANNEL \| 20V V(BR)DSS \| 77A I(D) \| TO-263AB
File Size	123.62K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3706 IRF3706L IRF3706S
OCR Text	...wing the G integral reverse S p-n junction diode. TJ = 25C, IS = 36A, VGS = 0V TJ = 125C, IS = 36A, VGS = 0V TJ = 25C, IF = 36A, VR=20V di...Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characterist...
Description	Power MOSFET(Vdss=20V/ Rds(on)max=8.5mohm/ Id=77A) Power MOSFET(Vdss=20V, Rds(on)max=8.5mohm, Id=77A) Power MOSFET(Vdss=20V Rds(on)max=8.5mohm Id=77A)
File Size	143.52K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3707 IRF3707L IRF3707S IRF3707PBF IRF3707STRL IRF3707STRR
OCR Text	...wing the G integral reverse S p-n junction diode. TJ = 25C, IS = 31A, VGS = 0V TJ = 125C, IS = 31A, VGS = 0V TJ = 25C, I F = 31A, VR=20V d...Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characterist...
Description	30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V Rds(on)max=12.5mohm Id=62A) Power MOSFET(Vdss=30V, Rds(on)max=12.5mohm, Id=62A) Power MOSFET(Vdss=30V/ Rds(on)max=12.5mohm/ Id=62A)
File Size	141.65K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3708 IRF3708L IRF3708S
OCR Text	...wing the G integral reverse S p-n junction diode. TJ = 25C, IS = 31A, VGS = 0V TJ = 125C, IS = 31A, VGS = 0V TJ = 25C, I F = 31A, VR=20V d...Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characterist...
Description	Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET（减振钢板基本\u003d 30V的，的Rdson）最大值\u003d 12mohm，身份证\u003d 62A条） Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)
File Size	137.00K / 10 Page	View it Online	Download Datasheet

For n-gate Found Datasheets File :: 74824 Search Time::1.406ms
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