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Samsung Electronic
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Part No. |
KM44C1000D KM44V1000D KM44C1000DJL-7 KM44C1000DJL-6 KM44C1000DJL-5 KM44V1000DJL-6 KM44V1000DJL-7 KM44C1000DJ-5 KM44V1000DJ-7
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Description |
1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 70ns 1M x 4bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns 1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 50ns 1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 60ns 1M x 4bit CMOS dynamic RAM with fast page mode, 5V, 70ns
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File Size |
371.80K /
21 Page |
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Spansion Inc. Spansion, Inc. SPANSION LLC
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Part No. |
S29GL01GP12TFI023 S29GL128P13FAI023 S29GL01GP12FAI023 S29GL128P12FAI023 S29GL128P11FAI023 S29GL01GP13FAI023 S29GL01GP11TFIV10 S29GL01GP11TFIV13 S29GL01GP11TFIV12 S29GL128P11FFI022 S29GL128P11FFI020 S29GL128P11FAI010 S29GL128P11FAI022 S29GL128P11FAI012 S29GL128P12FAIV10 S29GL01GP12TAI012 S29GL01GP13FAI022 S29GL128P11TFI022 S29GL128P13TFIV10 S29GL128P13TFIV12 S29GL01GP13TFIV13 S29GL01GP12FFIV10 S29GL01GP13FFIV13 S29GL128P11FFIV13
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Description |
3.0 Volt-only page mode Flash Memory featuring 90 nm MirrorBit Process Technology 128M X 1 FLASH 3V PROM, 110 ns, PBGA64 3.0 Volt-only page mode Flash Memory featuring 90 nm MirrorBit Process Technology 3.0伏只页面模式闪存具有90纳米MirrorBit工艺技 3.0 Volt-only page mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 130 ns, PBGA64 3.0 Volt-only page mode Flash Memory featuring 90 nm MirrorBit Process Technology 8M X 16 FLASH 3V PROM, 110 ns, PDSO56 3.0 Volt-only page mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 130 ns, PDSO56 3.0 Volt-only page mode Flash Memory featuring 90 nm MirrorBit Process Technology 1G X 1 FLASH 3V PROM, 120 ns, PBGA64
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File Size |
992.82K /
71 Page |
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Spansion, Inc. SPANSION LLC
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Part No. |
S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI010 S29GL064A10TFIR12 S29GL032A10BFIW30 S29GL064A90FFIR22 S29GL064A90TFIR60 S29GL064A90FAIR50 GL032A10BAIW43 IR80 S29GL064A10TFIR70 S29GL064A90TFIR73
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Description |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only page mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only page mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56 2M X 16 FLASH 3V PROM, 100 ns, PBGA56 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:page mode Access RoHS Compliant: Yes 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 4M X 16 FLASH 3V PROM, 100 ns, PDSO48
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File Size |
2,445.39K /
95 Page |
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Fujitsu, Ltd. Fujitsu Limited
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Part No. |
MB8504E032AA-60 MB8504E032AA-70
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Description |
4 M×32 BITS Hyper page mode DRAM Module(CMOS 4 M×32 位超级页面存取模式动态RAM模块) 4米32位超页模式内存的CMOS米32位超级页面存取模式动态内存模块) 4 M?32 BITS Hyper page mode DRAM Module(CMOS 4 M?32 浣??绾ч〉?㈠???ā寮????AM妯″?)
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File Size |
275.09K /
11 Page |
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Price and Availability
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