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For prior Found Datasheets File :: 61188 Search Time::1.282ms
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				Micron Technology, Inc.
Part No.	MT4LDT464HX
OCR Text	... average internal refresh rate, prior to the resumption of normal operation. part numbers fpm operating mode part number configuration refresh mt4ldt464hg-x 4 meg x 64 standard mt4ldt464hg-x s 4 meg x 64 self mt8ldt864hg-x 8 meg x 64 standa...
Description	SMALL-OUTLINE DRAM MODULE
File Size	618.85K / 32 Page	View it Online	Download Datasheet

				TriQuint Semiconductor
Part No.	TGC1430G-EPU
OCR Text	... their characterization process prior to finalizing all electrical and process specifications. Specifications subject to change without notice 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com...
Description	Tripler 20 - 40 GHZ X3 FREQUENCY MULTIPLIER
File Size	83.89K / 4 Page	View it Online	Download Datasheet

				EXAR[Exar Corporation]
Part No.	XR16L2751 XR16L2751IM XR16L2751CM
OCR Text	...be inverted by software control prior going to the decoder, see MCR[6] and FCTR[2]. UART channel A Request-to-Send (active low) or general purpose output. This output must be asserted prior to using auto RTS flow control, see EFR[6], MCR[1]...
Description	2.25V TO 5.5V DUART WITH 64-BYTE FIFO AND POWERSAVE
File Size	310.38K / 52 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	IRF530N
OCR Text	...ad, IAS = 7.8 A; tp = 300 s; Tj prior to avalanche = 25C; VDD 25 V; RGS = 50 ; VGS = 10 V; refer to fig:14 MIN. MAX. 150 UNIT mJ IAS - 17 A August 1999 1 Rev 1.100 Philips Semiconductors Product specification ...
Description	N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体 N-channel TrenchMOS TM transistor
File Size	95.87K / 7 Page	View it Online	Download Datasheet


Part No.	UPC2711TB
OCR Text	... subject to change without any prior notice. before purchasing or using any renesas el ectronics products li sted herein, please confirm the latest product information with a renesas electronics sales office. also , please pay regular a...
Description	2900 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
File Size	225.09K / 18 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors N.V. Rectron Semiconductor
Part No.	1N5257B 1N5225B 1N5242B 1N5241B 1N5244B 1N5231B 1N5232B 1N5253B 1N5229B 1N5239B 1N5245B 1N5265B 1N5226B 1N5248B 1N5228B 1N5256B 1N5267B 1N5243B 1N5234B 1N5251B 1N5247B 1N5255B
OCR Text	...= 100 s; square wave; Tj = 25 C prior to surge Tamb = 50 C; lead length max.; note 1 Lead length 8 mm; note 2 PZSM non-repetitive peak reverse power dissipation tp = 100 s; square wave; Tj = 25 C prior to surge; see Fig.3 tp = 8.3 ms; squar...
Description	Voltage regulator diodes 6.2 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 Voltage regulator diodes 33 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 Voltage regulator diodes 22 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 Voltage regulator diodes 17 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
File Size	32.71K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. Philips
Part No.	74ABT74 74ABT74N112 74ABT74D118 74ABT74DB 74ABT74PW-T 74ABT74D112 74ABT74DB-T
OCR Text	...t be stable just one setup time prior to the low-to-high transition of the clock for predictable operation. Clock triggering occurs at a voltage level and is not directly related to the transition time of the positive-going pulse. Following...
Description	From old datasheet system Dual D-type flip-flop
File Size	43.61K / 5 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BAS4 BAS45AL BAS45AL_4
OCR Text	... current square wave; Tj = 25 C prior to surge; see Fig.4 tp = 1 s tp = 1 ms tp = 1 s Ptot Tstg Tj Note 1. Device mounted on a FR4 printed-circuit board. total power dissipation storage temperature junction temperature Tamb = 25 C; note 1 -...
Description	LOW-LEAKAGE DIODE From old datasheet system
File Size	49.34K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. Philips Semiconductors
Part No.	BUK563-48C
OCR Text	... off energy CONDITIONS Tj = 25C prior to clamping; ID = 10 A; VDD < 16 V; VGS = 5 V; RG = 10 k; inductive load MIN. - BUK563-48C MAX. 200 UNIT mJ WDSRR Drain-source repetitive clamped Tj = 150C prior to clamping; inductive tu...
Description	PowerMOS transistor Voltage clamped logic level FET 21 A, 30 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	67.54K / 8 Page	View it Online	Download Datasheet

For prior Found Datasheets File :: 61188 Search Time::1.282ms
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