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  rds Datasheet PDF File

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    IPS1011PBF

International Rectifier
Part No. IPS1011PBF
OCR Text ...zations. product summary rds(on) 13m ? ( max . ) vclamp 36v ishutdown 85a (typ.) packages to-220 d2pak d-pak ips1011pbf ips1011spbf ips1011rpbf ...
Description INTELLIGENT POWER LOW SIDE SWITCH

File Size 654.96K  /  14 Page

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ...TA VDSS = 100 V ID = 17 A g rds(ON) 110 m s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology. Applications:* d.c. to d.c. converters * switched mode power...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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    Analog Power
Part No. AM4890N
OCR Text ...2 0.4 0.6 0.8 1 1.2 1.4 0 1 2 3 rds(on) - on - resistance ( ) id - drain current (a) 3.5v 4.5v,6v,8v,10v 0 0.5 1 1.5 2 2.5 3 0 1 2 3 id - drain current (a) vds - drain - to - source voltage (v) 10v,8v,6v,4.5v 3.5v 0...
Description Dual N-Channel 150-V (D-S) MOSFET

File Size 295.28K  /  5 Page

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    IRF7807D1

International Rectifier
Part No. IRF7807D1
OCR Text ... (Max Values) IRF7807D1 VDS rds(on) Qg Qsw Qoss 30V 25m 14nC 5.2nC 18.4nC Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-Ambient RJA Max. 50 Units C/W www.irf.com 1 11/8/99 ...
Description MOSFET / SCHOTTKY DIODE

File Size 162.75K  /  8 Page

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    IRF7807D2

International Rectifier
Part No. IRF7807D2
OCR Text ... (Max Values) IRF7807D2 VDS rds(on) Qg QSW Qoss 30V 25m 14nC 5.2nC 21.6nC Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-Ambient RJA Max. 50 Units C/W www.irf.com 1 11/8/99 ...
Description MOSFET / SCHOTTKY DIODE

File Size 131.40K  /  8 Page

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    IRF7807VD1

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF7807VD1
OCR Text ...ICE CHARACTERISTICSU IRF7807VD1 rds(on) QG Qsw Qoss 17m 9.5nC 3.4nC 12nC Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-AmbientS Maximum Junction-to-Lead RJA RJL Max. 50 20 Units C/W C/W ...
Description Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 116.12K  /  9 Page

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    IRF7807VD2 IRF7807VD2TR

IRF[International Rectifier]
Part No. IRF7807VD2 IRF7807VD2TR
OCR Text ...ICE CHARACTERISTICSU IRF7807VD2 rds(on) QG Qsw Qoss 17m 9.5nC 3.4nC 12nC Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-AmbientS Maximum Junction-to-Lead RJA RJL Max. 50 20 Units C/W C/W ...
Description 30V FETKY - MOSFET and Schottky Diode in a SO-8 package
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 113.54K  /  9 Page

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    IRF7807V

IRF[International Rectifier]
Part No. IRF7807V
OCR Text ...DEVICE CHARACTERISTICS IRF7807V rds(on) QG Qsw Qoss 17m 9.5nC 3.4nC 12nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS 4.5V) Pulsed Drain Current Power Dissipation TA...
Description N Channel Application Specific MOSFET

File Size 126.34K  /  8 Page

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    IRF7807 IRF7807A IRF7807ATR IRF7807TR

IRF[International Rectifier]
Part No. IRF7807 IRF7807A IRF7807ATR IRF7807TR
OCR Text ...es IRF7807 IRF7807A Vds 30V 30V rds(on) 25m 25m Qg 17nC 17nC Qsw 5.2nC Qoss 16.8nC 16.8nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS 4.5V) Pulsed Drain Current Pow...
Description 8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
Chip-Set for DC-DC Converters
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 238.61K  /  8 Page

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