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ONSEMI[ON Semiconductor]
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| Part No. |
MGP15N60u_D ON1858 MGP15N60u ON1857
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| OCR Text |
... VGE = 15 Vdc, L = 300 mH, Vd H RG = 20 , TJ = 125C) 125 C) Energy losses include "tail" (VCC = 360 Vdc, IC = 8 0 Ad Vd 8.0 Adc, VGE = 15 Vd...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
Motorola IGBT Device Data
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| Description |
IGBT IN TO-220 15 A @ 90 26 A @ 25 600 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor
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| File Size |
116.67K /
5 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGP7N60E_D ON1878 MGP7N60E ON1875
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| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT Thermal Resistance -- Junction to Ambient Maximum Le...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
Motorola IGBT Device Data
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| Description |
IGBT & DIODE IN TO-220 7.0 A @ 90 10 A @ 25 600 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor
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| File Size |
114.34K /
5 Page |
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it Online |
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ON Semi
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| Part No. |
MGP15N40CL_D ON1855
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| OCR Text |
...V 400 VOLTS CLAMPED
C
G G RG RGE C E
CASE 221A-09 STYLE 9 TO-220AB E
MAXIMuM RATINGS (TJ = 25C unless otherwise noted)
Rating C...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
6
MGP15N40CL/D Motorola ... |
| Description |
15 AMPERES N-CHANNEL IGBT V CE(on) = 1.8 V 380 VOLTS CLAMPED
From old datasheet system
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| File Size |
130.90K /
6 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT31N80JC3
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| OCR Text |
... 10V VDD = 400V ID = 31A @ 125C RG = 2.5 6 INDuCTIVE SWITCHING @ 25C VDD = 533V, VGS = 15V ID = 31A, RG = 5 6 INDuCTIVE SWITCHING @ 125C VDD...141
TC ( C)
0.226
30 5V
ZEXT
20
ZEXT are the external thermal impedances: Case to si... |
| Description |
Super Junction MOSFET
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| File Size |
248.14K /
5 Page |
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it Online |
Download Datasheet |
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Price and Availability
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