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  sot-307-2 Datasheet PDF File

For sot-307-2 Found Datasheets File :: 821    Search Time::1.359ms    
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    IXYS[IXYS Corporation]
Part No. IXFN80N50 IXFN75N50
OCR Text ...V/ns W C C C V~ V~ miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain TC = 25C TC = 25C IS IDM, di/dt...307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 ...
Description (IXFN80N50 / IXFN75N50) HiPerFET Power MOSFETs Single Die MOSFET

File Size 125.53K  /  4 Page

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    MJE340 MJE350 4171

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
Part No. MJE340 MJE350 4171
OCR Text ...g applications.It is mounted in SOT-32. The complementary PNP type is MJE350. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSO...307 0.445 0.035 0.030 0.106 0.050 0.629 DIM. H2 0016114 4/5 MJE340 / MJE350 Inform...
Description From old datasheet system
Complemetary Silicon Power Transistors(互补硅功率晶体管)

File Size 62.18K  /  5 Page

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    SMOS44N50 SMOS48N50

ETC
Part No. SMOS44N50 SMOS48N50
OCR Text SOT-227(ISOTOP) Dim. A B C D E F G H J K Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 ...307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 ...
Description POWER MOSFETS

File Size 162.20K  /  2 Page

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    APT10025JLC

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT10025JLC
OCR Text ...nce * Easier To Drive * Popular SOT-227 Package D G S All Ratings: TC = 25C unless otherwise specified. APT10025JLC UNIT Volts Amps ...307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.48...
Description Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
POWER MOS VI 1000V 34A 0.250 Ohm

File Size 34.89K  /  2 Page

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    APT10025JVFR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT10025JVFR
OCR Text ... FREDFET D G S * Popular SOT-227 Package All Ratings: TC = 25C unless otherwise specified. APT10025JVFR UNIT Volts Amps 1000 3...307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.48...
Description Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 34A 0.250 Ohm

File Size 73.43K  /  4 Page

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    APT10025JVR

Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT10025JVR
OCR Text ...100% Avalanche Tested * Popular SOT-227 Package G D S MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Param...307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.48...
Description Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-61 RoHS Compliant: No
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 34A 0.250 Ohm

File Size 71.02K  /  4 Page

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    APT2X101D60J APT2X100D60J

ADPOW[Advanced Power Technology]
Part No. APT2X101D60J APT2X100D60J
OCR Text ...overy Characteristics * Popular SOT-227 Package * Low Forward Voltage * High Blocking Voltage * Low Leakage Current PRODUCT BENEFITS * L...307) 8.2 (.322) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) 25.2 (0.992) 0.7...
Description DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES 600V 100A

File Size 68.06K  /  4 Page

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    Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
Part No. APT30M19JV APT30M19JVFR
OCR Text ... FREDFET D G S * Popular SOT-227 Package All Ratings: TC = 25C unless otherwise specified. APT30M19JVFR UNIT Volts Amps 300 13...307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.48...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
POWER MOS V 300V 130A 0.019 Ohm

File Size 76.32K  /  4 Page

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    APT40GF120JRD

Advanced Power Technology
Part No. APT40GF120JRD
OCR Text ...ery Waveform and Definitions SOT-227 (ISOTOP(R)) Package Outline 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M...
Description The Fast IGBT⑩ is a new generation of high voltage power IGBTs

File Size 40.07K  /  4 Page

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    STMICROELECTRONICS[STMicroelectronics]
Part No. 2N5192 2N5191 5232
OCR Text ...l-base NPN transistors in Jedec SOT-32 plastic package. They are inteded for use in medium power linear and switching applications. The comp...307 0.445 0.035 0.030 0.106 0.050 0.629 DIM. H2 0016114 3/4 2N5191 / 2N5192 Informat...
Description From old datasheet system
MEDIUM POWER NPN SILICON TRANSISTORS

File Size 64.32K  /  4 Page

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For sot-307-2 Found Datasheets File :: 821    Search Time::1.359ms    
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