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2E101 SR10040 MAX499 DMF5001N 1N747 DMF5001N 085501 MC74VHC1
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    VRM10 VRM10-105-12-EY VRM10-80-12-PY VRM10-85-12-UY

Emerson Network Power
Part No. VRM10 VRM10-105-12-EY VRM10-80-12-PY VRM10-85-12-UY
OCR Text ...es,Table 3) Continuous Peak non-sustained Continuous Peak non-sustained Continuous Peak non-sustained 0.8375-1.6000 Vdc 0 A min. 85 A max. 100 A max. 80 A max. 91 A max. 105 A max. 120 A max. 0.91-1.25 mW Vo max VID - Rout * Iout V Vo min V...
Description non-isolated DC-DC converters

File Size 510.55K  /  10 Page

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    TOSHIBA
Part No. THNCF064MM
OCR Text ...mbytes/second theoretically ? sustained write : max 1.5 mbytes/second in ata pio mode 4 ? sustained read : max 6.5mbytes/second in ata pio mode 4 ? single +5 volt or 3.3 volt power supply :w and automatic power management. notes: c...
Description CompactFlashTM

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    TOSHIBA
Part No. THNCF032M THNCF064M
OCR Text ...tolerance with high performance sustained write speed. features ? compactflash ? compatibility ? certified in accordance with the compactflash? certification plan ? substantially compatible with pc card standard and pc card ata ...
Description CompactFlashTM

File Size 413.27K  /  47 Page

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    UHP28212A

Murata Manufacturing Co., Ltd.
Part No. UHP28212A
OCR Text ...The converter will shut down on sustained input undervoltage, output overcurrent, output short circuit and overvoltage and thermal shutdown. Overload currents less than a short circuit limit the output current so that operation OUTPUT CH...
Description Isolated, 12 Amp Half Brick, 48VIN/28.2VOUT DC/DC Converters

File Size 219.61K  /  9 Page

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    K4R441869A K4R271669A-NMCG6 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R2716

Sunon, Inc.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4R441869A K4R271669A-NMCG6 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R271669A-NBMCCG6
OCR Text ...ct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10ns per sixteen bytes). The architecture of the Direct RDRAMs allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory tr...
Description 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256 × 16/18位2 * 16属银行直接RDRAMTM

File Size 4,066.36K  /  64 Page

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    KM416RD8ACD-RK70 KM416RD8ACD-RK80 KM418RD8ACD-RK70 KM418RD8ACD-RK80 KM418RD2D KM416RD2C KM418RD4C KM416RD8D KM418RD4D KM

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM416RD8ACD-RK70 KM416RD8ACD-RK80 KM418RD8ACD-RK70 KM418RD8ACD-RK80 KM418RD2D KM416RD2C KM418RD4C KM416RD8D KM418RD4D KM416RD4D KM418RD2C KM416RD2D KM416RD8C KM418RD8C KM418RD8D KM418RD2AC KM418RD8ACD-RG60 KM416RD8ACDB-RCG60
OCR Text ...ct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10ns per sixteen bytes). The architecture of the Direct RDRAMs allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory tr...
Description 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 128/144Mbit RDRAM56 × 16/18位2 * 16属银行直接RDRAMTM
24.9K 1% 1/4W -200 TO 500 PPM/C MF 128/144Mbit RDRAM56 × 16/18位2 * 16属银行直接RDRAMTM
BACKSHELL
CLAMP

File Size 4,061.75K  /  64 Page

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    MAX6126AAUA21 MAX6126BAUA21 MAX6126AAUA41 MAX6126BAUA41 MAX6126AASA41 MAX6126BASA21 MAX6126BASA25 MAX6126AASA21 MAX6126A

MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
Part No. MAX6126AAUA21 MAX6126BAUA21 MAX6126AAUA41 MAX6126BAUA41 MAX6126AASA41 MAX6126BASA21 MAX6126BASA25 MAX6126AASA21 MAX6126AASA25 MAX6126AASA30 MAX6126AASA50 MAX6126AAUA25 MAX6126AAUA30 MAX6126AAUA50 MAX6126BAUA50 MAX6126 MAX6126BASA30 MAX6126BASA41 MAX6126BASA50 MAX6126BAUA25 MAX6126BAUA30
OCR Text ... VOUT = 0.01% of final value No sustained oscillations CNR = 0 CNR = 0.1F 1.3 60 35 0.8 20 0.1 to 10 VP-P nV/Hz ms F SYMBOL CONDITIONS MIN TYP MAX UNITS MAX6126 ELECTRICAL CHARACTERISTICS--MAX6126_25 (VOUT = 2.500V) (VIN = 5V, CLOAD ...
Description Ultra-High-Precision, Ultra-Low-Noise, Series Voltage Reference
GT 5C 3#4 2#16 PIN RECP
Ultra-High-Precision / Ultra-Low-Noise / Series Voltage Reference

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    EDX5116ADSE-3A-E EDX5116ADSE-3B-E EDX5116ADSE-3C-E EDX5116ADSE-4D-E

Elpida Memory
Part No. EDX5116ADSE-3A-E EDX5116ADSE-3B-E EDX5116ADSE-3C-E EDX5116ADSE-4D-E
OCR Text ...XDR DRAM devices are capable of sustained data transfers of 8000/6400 MB/s. XDR DRAM device architecture allows the highest sustained bandwidth for multiple, interleaved randomly addressed memory transactions. The highly-efficient protocol ...
Description 512M bits XDR DRAM
512M bits XDR?/a> DRAM

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