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  tcc Datasheet PDF File

For tcc Found Datasheets File :: 1182    Search Time::3.875ms    
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    KM48S8030 KM48S8030C KM48S8030CT-G_FA KM48S8030CT-G/FA

Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM48S8030 KM48S8030C KM48S8030CT-G_FA KM48S8030CT-G/FA
OCR Text ...(min) IOL = 0 mA CKE VIL(max), tcc = 15ns CAS Latency Preliminary PC133 CMOS SDRAM Version -A 75 1 1 12 Unit Note Operating current (One bank active) Precharge standby current in power-down mode ICC1 ICC2P mA 1 I...
Description 2M x 8Bit x 4 Banks Synchronous DRAM 200万8位4银行同步DRAM

File Size 81.46K  /  8 Page

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    A43L0616A A43L0616AV A43L0616AV-5 A43L0616AV-55 A43L0616AV-6 A43L0616AV-7 A43L0616AV-7U

AMICC[AMIC Technology]
Part No. A43L0616A A43L0616AV A43L0616AV-5 A43L0616AV-55 A43L0616AV-6 A43L0616AV-7 A43L0616AV-7U
OCR Text ...Burst Length = 1 tRC tRC(min), tcc tcc(min), IOL = 0mA CKE VIL(max), tcc = 15ns CKL VIL(max), tcc = CKE VIH(min), CS VIH(min), tcc = 15ns Input signals are changed one time during 30ns CKE VIH(min), CLK VIL(max), tcc = Input signa...
Description 512K X 16 Bit X 2 Banks Synchronous DRAM

File Size 1,008.96K  /  45 Page

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    Samsung Electronic
Part No. M366S1723CTS
OCR Text ...condition version unit note -7a tcc=7.5ns tcc=10ns operating current (one bank active) i cc1 burst length = 1 t rc 3 t rc (min) i o = 0 ma 960 880 ma 1 precharge standby current in power-down mode i cc2 p cke v il (max), t cc = 10ns...
Description 16M x 64 SDRAM DIMM based on 16M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect

File Size 152.73K  /  10 Page

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    Elan Microelectronics, Corp.
Part No. EM78P156ELKM
OCR Text ... 8 9 16 15 14 13 12 11 10 17 18 tcc vdd vs s p5 0 p5 1 p5 3 p6 0 / i n t p6 1 p6 2 p6 3 p 6 4 p5 2 /r eset osci osc o p6 7 p6 6 p6 5 em78p156elas 1 2 3 4 5 6 7 8 9 16 15 14 13 12 11 10 17 18 nc nc 20 19 tc c vd d vs s p50 p51 p5 3 p6 0 / i ...
Description 8-BIT MICRO-CONTROLLER 8位微控制

File Size 359.35K  /  55 Page

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    K4M281633F K4M281633F-C K4M281633F-F1L K4M281633F-G K4M281633F-L K4M281633F-N K4M281633F-RE

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4M281633F K4M281633F-C K4M281633F-F1L K4M281633F-G K4M281633F-L K4M281633F-N K4M281633F-RE
OCR Text ...C(min) IO = 0 mA CKE VIL(max), tcc = 10ns -1H -1L Unit Note ICC1 80 75 75 mA 1 ICC2P 0.5 mA 0.5 12 mA 10 7 mA 7 23 mA ICC2PS CKE & CLK VIL(max), tcc = ICC2N CKE VIH(min), CS VIH(min), tcc = 10ns Input signals...
Description 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 200万16 × 4银行54FBGA移动SDRAM

File Size 111.99K  /  12 Page

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    K4M28163LF K4M28163LF-C K4M28163LF-L K4M28163LF-N K4M28163LF-R1L K4M28163LF-R75 K4M28163LF-RE K4M28163LF-S K4M28163LF-BR

SAMSUNG[Samsung semiconductor]
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4M28163LF K4M28163LF-C K4M28163LF-L K4M28163LF-N K4M28163LF-R1L K4M28163LF-R75 K4M28163LF-RE K4M28163LF-S K4M28163LF-BR750
OCR Text ...C(min) IO = 0 mA CKE VIL(max), tcc = 10ns -1H -1L Unit Note ICC1 65 65 60 mA 1 ICC2P 0.5 mA 0.5 10 mA 9 7 mA 7 20 mA ICC2PS CKE & CLK VIL(max), tcc = ICC2N CKE VIH(min), CS VIH(min), tcc = 10ns Input signals ...
Description 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 200万16 × 4银行4FBGA移动SDRAM
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54

File Size 112.71K  /  12 Page

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    K4M28163PF K4M28163PF-F75 K4M28163PF-R K4M28163PF-RBGF75 K4M28163PF-RG K4M28163PF-RF750 K4M28163PF-BF900 K4M28163PF-BF75

Samsung Electronic
Samsung Semiconductor Co., Ltd.
Data Device, Corp.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. K4M28163PF K4M28163PF-F75 K4M28163PF-R K4M28163PF-RBGF75 K4M28163PF-RG K4M28163PF-RF750 K4M28163PF-BF900 K4M28163PF-BF750 K4M28163PF-BG750
OCR Text ...C(min) IO = 0 mA CKE VIL(max), tcc = 10ns -90 -1L Unit Note ICC1 40 35 35 mA 1 ICC2P 0.3 mA 0.3 10 mA 1 5 mA 1 20 mA ICC2PS CKE & CLK VIL(max), tcc = ICC2N CKE VIH(min), CS VIH(min), tcc = 10ns Input signals ...
Description 2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 200万16 × 4银行4FBGA移动SDRAM
8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54
8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54
8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, FBGA-54

File Size 111.60K  /  12 Page

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    http://
Part No. WV3DG7266V-D1
OCR Text ... v ih (min), cs# v ih (min), tcc =10ns input signals are charged one time during 20ns 360 ma 3 i cc2ns cke v ih (min), clk v il (max), t cc = input signals are stable 180 active standby current in power-down mode i cc3p cke v...
Description 512MB -2x32Mx72 SDRAM, UNBUFFERED, w/PLL

File Size 170.16K  /  8 Page

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    MSM56V16160D MSM56V16160DH

OKI electronic components
OKI[OKI electronic componets]
Part No. MSM56V16160D MSM56V16160DH
OCR Text ...0 10 -- 80 -- 70 -- CKE VIH tcc = min tRC = min No Burst CKE VIH tcc = min tRC = min tRRD = min No Burst CKE VIH tcc = min CKE VIL tcc = min 60 mA 1, 2 ICC1D Both Banks Active -- 115 -- 95 -- 80 mA 1, 2 Power Sup...
Description From old datasheet system
2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM

File Size 336.88K  /  30 Page

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    MSM56V16160F

OKI electronic components
OKI[OKI electronic componets]
Part No. MSM56V16160F
OCR Text ...r supply current (Operating) tcc=min. CKEVIH tRC=min. No Burst 3/4 80 3/4 70 mA 1,2 ICC1D tcc=min. t =min. Both Banks CKEVIH RC Active tRRD=min. No Burst Both Banks CKEVIH tcc=min. Precharge Both Banks CKEVIL tcc=...
Description 2-Bank x 524,288 Word x 16 Bit SYNCHRONOUS DYNAMIC RAM

File Size 2,984.17K  /  31 Page

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For tcc Found Datasheets File :: 1182    Search Time::3.875ms    
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