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ON Semi
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| Part No. |
MMFT3055V_D ON2228
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| OCR Text |
... V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This new technology more t...261AA 1 2 3
Symbol VDSS VDGR VGS VGSM ID ID IDM PD
Value 60 60 20 25 1.7 1.4 6.0 2.1 1.7 0.9... |
| Description |
N-hannel Enhancement-ode Silicon Gate
From old datasheet system
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| File Size |
223.75K /
10 Page |
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it Online |
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ON Semi
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| Part No. |
MMFT3055EL_D ON2224
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| OCR Text |
...is a TMOS power MOSFET designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low thr...261AA
Value 60 15 1.5 6 0.8 6.4 - 65 to 150 178
Unit Vdc Adc Watts mW/C C mJ
DEVICE MARKIN... |
| Description |
N-hannel Enhancement-ode Logic Level SOT24
From old datasheet system
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| File Size |
201.65K /
10 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRFL4310 IRFL4310TR
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| OCR Text |
... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...261AA) Outline
Part Marking Information
SOT-223
EXAMPLE : THIS IS AN IRFL014 WAFER LOT CODE X... |
| Description |
HEXFET? Power MOSFET
1.6 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, to-261aa
Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A)
100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
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| File Size |
310.61K /
9 Page |
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it Online |
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Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
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| Part No. |
MMFT1N10E_D ON2216 MMFT1N10E MMFT1N10
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| OCR Text |
...OS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offer...261AA
Value 100 20 1 4 0.8 6.4 - 65 to 150 168
Unit Vdc Adc Watts mW/C C mJ
DEVICE MARKING... |
| Description |
MEDIUM POWER TMOS FET 1 AMP 100 VOLTS 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, to-261aa
N-hannel Enhancement-ode Logic Level SOT23
From old datasheet system
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| File Size |
236.13K /
10 Page |
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it Online |
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InternationalRectifier
IRF[International Rectifier]
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| Part No. |
20CJQ045
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| OCR Text |
...
45 390 0.46
V A V
-55 to 150
C
SOT-223
CASE STYLE CASE OUTLINE
PART MARKING
PART NUMBER 2CJQF
INTERNATIONAL
RECTI...261AA.
3
1 ANODE 1
2
ANODE 2
COMMON CATHODE
297
To Order
Previous Datasheet
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| Description |
SCHOTTKYRECTIFIER/2Amp
SCHOTTKY RECTIFIER, 2Amp
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| File Size |
150.30K /
4 Page |
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it Online |
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InternationalRectifier
IRF[International Rectifier]
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| Part No. |
20CJQ060 INTERNATIONALRECTIFIER-20CJQ060
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| OCR Text |
...
60 385 0.56
V A V
-55 to 150
C
SOT-223
CASE STYLE CASE OUTLINE
PART MARKING
PART NUMBER 2CJQH
INTERNATIONAL
RECTIFI...261AA.
3
1 ANODE 1
2
ANODE 2
COMMON CATHODE
301
To Order
Previous Datasheet
... |
| Description |
SCHOTTKYRECTIFIER/2Amp
SCHOTTKY RECTIFIER, 2 Amp
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| File Size |
147.11K /
4 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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| Part No. |
BCP68T1
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| OCR Text |
...ating the possibility of damage to the die * Available in 12 mm Tape and Reel Use BCP68T1 to order the 7 inch/1000 unit reel. Use BCP68T3 to...261AA
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Collector-Emitter Voltage Collect... |
| Description |
MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT
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| File Size |
108.14K /
6 Page |
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it Online |
Download Datasheet |
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Price and Availability
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