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  v-3.6 Datasheet PDF File

For v-3.6 Found Datasheets File :: 431926    Search Time::4.875ms    
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    BP1.0-6 BP1.0-6FR BP10-6

B. B. Battery Co., Ltd.
Part No. BP1.0-6 BP1.0-6FR BP10-6
OCR Text v.(1.75v/cell) t erminals 65m 0.3 a oo o o charge 0 c ~ 40 c(32 f ~ 104 f) oo o o discharge -20 c ~ 50 c(-4 f ~ 122 f) oo o o storage. -20 c ~ 40 c(-4 f ~ 104 f) abs(ul94-hb, ul94-v0 is optional) internal resistance length ...
Description VRLA Rechargeable Battery
   VRLA Rechargeable Battery

File Size 195.26K  /  1 Page

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    Vishay
Part No. GMDA05-6
OCR Text ... unit reverse stand-off voltage v rwm 5 v reverse breakdown voltage i t = 1 ma v br 6 v reverse leakage current v rwm = 5 v i r 20 peak p...3 package dimensions in inches (mm) mounting pad layout 5 1 4 0.244 (6.20) 0.228 (5.79) 8 0.157 (3.9...
Description ESD Protection Diode Array

File Size 82.71K  /  4 Page

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    Sumida, Corp.
Part No. PLCDA03C-6 PLCDA05C-6 PLCDA15C-6
OCR Text ...minimum breakdown voltage @ 1ma v (br) volts maximum clamping voltage (see fig. 2) @ i p = 1a v c volts maximum clamping voltage (see fig. ...3.3 5.0 8.0 15.0 3 www.protekdevices.com 05102.r2 1/02 plcda03c-6 thru plcda15c-6 0 25 ...
Description Direct ProTek Replacement:PLCDA05C-6
Direct ProTek Replacement:PLCDA15C-6
Direct ProTek Replacement:PLCDA03C-6 直接太克替代:PLCDA03C - 6

File Size 449.54K  /  5 Page

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    VG4616321BQ-6 VG4616321BQ-5R VG4616321BQ-7 VG4616321BQ-6R VG4616321BQ-7R

Vanguard International Semiconductor
Part No. VG4616321BQ-6 VG4616321BQ-5R VG4616321BQ-7 VG4616321BQ-6R VG4616321BQ-7R
OCR Text ...le time(min.) 45/54/62 ns dq3 1 v ddq 2 dq4 3 dq5 4 v ssq 5 dq6 6 dq7 7 v ddq 8 dq16 9 dq17 10 11 dq18 12 dq19 13 v ddq 14 15 16 17 dq21 18 19 v ssq 20 dq23 21 22 dqm0 23 24 we 25 cas 26 ras 27 cs 28 bs 29 a8 30 dq28 v ddq dq27 dq26 v ssq v...
Description 262,144x32x2-Bit CMOS Synchronous Graphic RAM

File Size 1,376.43K  /  82 Page

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    Mitsubishi Electric Corporation
Part No. FK20VS-6
OCR Text v dss v gss i d i dm i s i sm p d t ch t stg fk20vs-6 10.5max. 1.3 1.5max. qwe r 4.5 0 +0.3 ? 3.0 +0.3 ?.5 1 5 0.8 8.6 ?0.3 9.8 ?0.5 1.5max. (1.5) 0.5 4.5 2.6 ?0.4 wr q e q gate w drain e source r drain v dss ..........................
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 63.07K  /  5 Page

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    Mitsubishi Electric Corporation
Part No. FK16VS-6
OCR Text ...te w drain e source r drain v dss ................................................................................ 300v r ds (on) (max)...3 0.31 2.48 10.0 1050 220 45 20 40 110 50 1.5 300 30 2 6.5 i d = 1ma, v gs = 0v i...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 60.67K  /  5 Page

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    HYB25D512160BC-6 HYB25D512800BC-6

Qimonda AG
Part No. HYB25D512160BC-6 HYB25D512800BC-6
OCR Text ...periodic refresh interval ? 2.5 v (sstl_2 compatible) i/o ? v ddq = 2.5 v 0.2 v and 2.6 v 0.1 v for ddr400 ? v dd = 2.5 v 0.2 v a...3.0-3-3 200 2.5-3-3 166 ddr400b p-tsopii-66 hyb25d512160bt?5 16 hyb25d512400bt?6 4 2.5-3-3 166 2-3...
Description 512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60
512-Mbit Double-Data-Rate SDRAM 64M X 8 DDR DRAM, 0.7 ns, PBGA60

File Size 1,274.23K  /  37 Page

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    HYS64D16000HDL-6-C HYS64D32020HDL-6-C

Infineon Technologies AG
Part No. HYS64D16000HDL-6-C HYS64D32020HDL-6-C
OCR Text ...ddr sdram) single +2.5v ( 0.2 v) power supply  built with 256 mbit ddr sdrams organised as 16 in p?tsopii?66?1 packages  programmable ...3.80 mm  jedec standard reference layout raw cards a and c  gold plated contacts 1.2 description ...
Description 200-Pin Small Outline Dual-In-Line Memory Modules 200引脚小外型双列直插内存模

File Size 389.16K  /  24 Page

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