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				SIPEX[Sipex Corporation]
Part No.	SP6122CU SP6122EB SP6122UEB
OCR Text	...sistors are derived below: i1 = Va/Rin2 = 1.25/62.5K = 20uA Since Rin2 has +/-50% tolerance, ib change is +20uA/-7uA. If the SP6122 is trimmed to 1.5V output, Vb will be fixed at 1.5V in a closed loop. As a result, i2 is not affected by the...
Description	Evaluation Board Manual
File Size	315.81K / 6 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SD1996
OCR Text	....3V Rank hFE1 VB VV VA VB Ron= !1000() VA-VB 1 Transistor PC -- Ta 800 1.2 IB=4.0mA 1.0 Ta=25C 3.5mA 3.0mA 0.8 2.5mA 2.0mA 0.6 1.5mA 0.4 1.0mA 0.5mA 0.2 100 0 0 20 40 60 80 100 120 140 160 0 0 1 2 3 4 5 6 2SD1996 ...
Description	Silicon NPN epitaxial planer type(For low-voltage output amplification)
File Size	42.80K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd.
Part No.	APT5010JLC
OCR Text	... AL IC HN EC ON TI ED AT NC RM VA FO AD IN 500 44 176 30 40 450 3.6 -55 to 150 300 44 50 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 2500 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGS...
Description	POWER MOS VI 500V 44A 0.100 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.93K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
Part No.	APT5014B2LC APT5014LLC APT5014
OCR Text	... AL IC HN EC ON TI ED AT NC RM VA FO AD IN 500 37 148 30 40 450 3.6 -55 to 150 300 37 35 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 1600 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGS...
Description	POWER MOS VI 500V 37A 0.140 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
File Size	34.16K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT5014BFLL APT5014SFLL
OCR Text	... AL IC HN EC ION E T AT NC RM VA FO AD IN ID = ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 1.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX UNIT Amps Volts V/ns ns 35 140 1.3 15 250 525 (VGS = 0V, IS = -ID [Cont.]) dv/ dt Tj...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.46K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
Part No.	APT5015BLC
OCR Text	... AL IC HN EC ON TI ED AT NC RM VA FO AD IN 500 32 128 30 40 370 2.96 300 32 30 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IG...
Description	POWER MOS VI 500V 32A 0.150 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
File Size	28.40K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5016 APT5016BFLL APT5016SFLL
OCR Text	... AL IC HN EC ION E T AT NC RM VA FO AD IN ID = ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX UNIT Amps Volts V/ns ns 30 120 1.3 5 250 500 (VGS = 0V, IS = -ID [Cont.]) dv/ dt Tj ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	53.90K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5017BLC APT5017SLC APT10086BLC APT10086SLC
OCR Text	... AL IC HN EC ON TI ED AT NC RM VA FO AD IN 500 30 120 30 40 370 2.96 300 30 30 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IG...
Description	POWER MOS VI 500V 30A 0.170 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.77K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5018BFLL APT5018SFLL
OCR Text	... AL IC HN EC ION E T AT NC RM VA FO AD IN ID = ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX UNIT Amps Volts V/ns ns 27 108 1.3 5 250 500 (VGS = 0V, IS = -ID [Cont.]) dv/ dt Tj ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	53.84K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5020BLC APT5020SLC
OCR Text	... AL IC HN EC ON TI ED AT NC RM VA FO AD IN 500 26 104 30 40 300 2.4 -55 to 150 300 26 30 (Repetitive and Non-Repetitive) 1 4 Volts Watts W/C C Amps mJ 1300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGS...
Description	POWER MOS VI 500V 26A 0.200 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.78K / 2 Page	View it Online	Download Datasheet

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