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For w 20v Found Datasheets File :: 36725 Search Time::1.797ms
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				International Rectifier
Part No.	IRF1407
OCR Text	... 10 lbfin (1.1Nm) Units A w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Gr...20v VGS = -20v ID = 78A VDS = 60V VGS = 10VT VDD = 38V ID = 78A RG = 2.5 VGS = 10V T D Between lead,...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A? Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?) POwER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ) Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A) Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)
File Size	126.10K / 9 Page	View it Online	Download Datasheet

				International Rectifier Seme LAB
Part No.	IRF140SMD
OCR Text	...RDS(on) FEATURES 100V 13.9A w 0.077w 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) *...20v (VGS = 0 , Tcase = 25C) (VGS = 0 , Tcase = 100C) 22A 13.9A 88A 75w 0.6w/C 250mJ 5.5V/ns -55 to 1...
Description	N-CHANNEL POwER MOSFET
File Size	22.30K / 2 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	IRF150SMD
OCR Text	...) RDS(on) FEATURES 100V 19A w 0.070w 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) *...20v (VGS = 0 , Tcase = 25C) (VGS = 0 , Tcase = 100C) 27A 19A 108A 100w 0.8w/C 150mJ 5.5V/ns -55 to 1...
Description	N-CHANNEL POwER MOSFET
File Size	22.29K / 2 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	Q67040-S4655 IKA03N120H2 Q67040-S4649
OCR Text	...0 C VGE Ptot IF 9.6 3.9 20 29 V w ICpuls Symbol VCE IC 8.2 9 9 Value 1200 Unit V A VCE 1200V 1200V IC 3A 3A Eoff 0.15mJ 0.15mJ Tj 150C 150C ...20v, I C = 3A 2 20 80 100 nA S 2.1 1.55 1.6 3 3.9 A 2.2 2.5 2.4 2.8 1200 V Symbol Conditions Value m...
Description	IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT FullPak HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode High Speed CMOS Logic Hex Non-Inverting Buffers 16-TSSOP -55 to 125
File Size	332.84K / 14 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1704
OCR Text	... 10 lbfin (1.1Nm) Units A w w/C V mJ A mJ V/ns C C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, ...20v nA -200 VGS = -20v 260 ID = 100A 63 nC VDS = 32V 59 VGS = 10V, See Fig. 6 and 13 --- VDD = 20v ...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A) POwER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)
File Size	100.05K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRHNA8064 JANSF2N7431U JANSG2N7431U IRHNA7064
OCR Text	... 25c max. power dissipation 300 w linear derating factor 2.4 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 500 ...20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 260 v gs ...
Description	60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package 60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-2 package
File Size	122.58K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF2204
OCR Text	... 10 lbfin (1.1Nm) Units A w w/C V mJ A mJ C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased...20v nA -200 VGS = -20v 200 ID = 130A 52 nC VDS = 32V 59 VGS = 10V --- VDD = 20v --- ID = 130A ns ---...
Description	40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AUTOMOTIVE MOSFET
File Size	138.67K / 9 Page	View it Online	Download Datasheet

				FUJI[Fuji Electric]
Part No.	MS5F6015
OCR Text	...7,28 5 6 V 21,22 7 8 9 10 w 19,20 11 12 13,1 4 MS5F6015 3 13 a H04-004-03a 3. Absolute Maximum Ratings ( at Tc= 25o C u...20v VCE=20v Ic=50mA Ic=50A VGE=15V min. 4.5 - Characteristics typ. max. 6.5 2.15 2.35 1.90 2.10 6...
Description	IGBT MODULE
File Size	459.14K / 13 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB] Air Cost Control
Part No.	IRF240SMD
OCR Text	...RDS(on) FEATURES 200V 13.9A w 0.180w 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) *...20v (VGS = 0 , Tcase = 25C) (VGS = 0 , Tcase = 100C) 13.9A 8.8A 56A 75w 0.6w/C 450mJ 5.0V/ns -55 to ...
Description	N.CHANNEL POwER MOSFET N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDS（对）：0.18Ω））
File Size	22.29K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	MS1502
OCR Text	...00 -65 to +150 Unit V V V A w C C Thermal Data RTH(J-C) Junction-case Thermal Resistance* 5.5 C/w Advanced Power Technology rese...20v VCE = 20v VCE = 20v IC = 220 mA Min. 0.5 9.5 --- Value Typ. ------- Max. -----58 5 ...
Description	RF & MICROwAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS
File Size	93.03K / 3 Page	View it Online	Download Datasheet

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