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    2SJ619

Toshiba Corporation
Toshiba Semiconductor
Sanyo Semicon Device
Part No. 2SJ619
OCR Text ... ON resistance: RDS (ON) = 0.15 w (typ.) High forward transfer admittance: iYfsi = 7.7 S (typ.) Low leakage current: IDSS = -100 A (max) (VD...ch-c) Max 1.67 Unit C/w 1 Note 1: Please use devices on condition that the channel temperature is...
Description ZD-3.6V- 1 w
TOSHIBA Field Effect Transistor Silicon P channel MOS Type (L2MOSV)
Field Effect Transistor Silicon P channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications

File Size 216.16K  /  6 Page

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    2SJ620

TOSHIBA[Toshiba Semiconductor]
Part No. 2SJ620
OCR Text ...12.5 150 -55 to150 Unit V V V A w mJ A mJ C C Pulse (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2)...ch-c) Max 1.0 Unit C/w 1 Note 1: Please use devices on condition that the channel temperature is ...
Description Field Effect Transistor Silicon P channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications
TOSHIBA Field Effect Transistor Silicon P channel MOS Type (L2-ヰ-MOSV)
TOSHIBA Field Effect Transistor Silicon P channel MOS Type (L2--MOSV)

File Size 221.26K  /  6 Page

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    2SK1083 2SK1083-MR

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FUJI[Fuji Electric]
Part No. 2SK1083 2SK1083-MR
OCR Text ...0 150 -55 ~ +150 Unit V A A A V w C C - Electrical characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Volt...ch-a) th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 62,5 6,25 ...
Description N-channel MOS-FET

File Size 182.82K  /  2 Page

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    2SK1085-M

Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
http://
Part No. 2SK1085-M
OCR Text ...0 150 -55 ~ +150 Unit V A A A V w C C > Equivalent Circuit - Electrical characteristics (TC=25C), unless otherwise specified Item Dra...ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 62,5 6,2...
Description N-channel MOS-FET 3 A, 150 V, 1.17 ohm, N-chANNEL, Si, POwER, MOSFET

File Size 177.09K  /  2 Page

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    2SK1088 2SK1088-M

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FUJI[Fuji Electric]
Part No. 2SK1088 2SK1088-M
OCR Text ...5 150 -55 ~ +150 Unit V A A A V w C C > Equivalent Circuit - Electrical characteristics (TC=25C), unless otherwise specified Item Dra...ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 62,5 3,5...
Description N-channel MOS-FET

File Size 181.89K  /  2 Page

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    2SK1089

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FUJI[Fuji Electric]
Part No. 2SK1089
OCR Text ...0 150 -55 ~ +150 Unit V A A A V w C C > Equivalent Circuit - Electrical characteristics (TC=25C), unless otherwise specified Item Dra...ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 35 1,56 ...
Description N-channel MOS-FET

File Size 198.93K  /  2 Page

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    2SK1098-M

FUJI[Fuji Electric]
Part No. 2SK1098-M
OCR Text ...0 150 -55 ~ +150 Unit V A A A V w C C > Equivalent Circuit - Electrical characteristics (TC=25C), unless otherwise specified Item Dra...ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 62,5 4,1...
Description N-channel MOS-FET

File Size 176.27K  /  2 Page

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    2SK1151 2SK1151L 2SK1151S 2SK1152 2SK1152L 2SK1152S

HITACHI[Hitachi Semiconductor]
Part No. 2SK1151 2SK1151L 2SK1151S 2SK1152 2SK1152L 2SK1152S
OCR Text ...55 to +150 Unit V V A A A w C C 2 2SK1151(L)(S), 2SK1152(L)(S) Electrical characteristics (Ta = 25C) Item Drain to source brea...ch-c(t) = S (t) * ch-c ch-c = 6.25C/w, TC = 25C PDM D = Pw T 0.03 0.01 ot Pu h 1S lse T 10...
Description    Silicon N-channel MOS FET
Power switching MOSFET

File Size 47.75K  /  9 Page

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    2SK1153 2SK1154

HITACHI[Hitachi Semiconductor]
Part No. 2SK1153 2SK1154
OCR Text ...55 to +150 Unit V V A A A w C C 2 2SK1153, 2SK1154 Electrical characteristics (Ta = 25C) Item Drain to source breakdown voltag...ch-c(t) = S (t) * ch-c ch-c = 4.17C/w, TC = 25C PDM D = Pw T Pw T 100 m 1 10 Switching Time Test ...
Description Silicon N channel MOS FET
Silicon N-channel MOS FET

File Size 47.74K  /  9 Page

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    2SK1155 2SK1156

HITACHI[Hitachi Semiconductor]
Part No. 2SK1155 2SK1156
OCR Text ...55 to +150 Unit V V A A A w C C 2 2SK1155, 2SK1156 Electrical characteristics (Ta = 25C) Item Drain to source breakdown voltag...ch-c (t) = S (t) * ch-c ch-c = 2.50C/w, TC = 25C PDM Pw T 1m 10 m Pulse width Pw (s) 100 m 1 D = Pw ...
Description Silicon N channel MOS FET
Silicon N-channel MOS FET

File Size 48.47K  /  9 Page

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