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				Micron Technology
Part No.	MT49H8M32 MT49H8M32FM
OCR Text	x16, x32 2.5V VEXT, 1.8V VDD, 1.8V VDDQ, RLDRAM REDUCED LATENCY DRAM (RLDRAM) FEATURES * 2.5V VEXT, 1.8V VDD, 1.8V VDDQ I/O * Cyclic bank addressing for maximum data out bandwidth * Non-multiplexed addresses * Non-interruptible sequent...
Description	REDUCED LATENCY DRAM RLDRAM
File Size	649.61K / 43 Page	View it Online	Download Datasheet

				Qimonda AG
Part No.	HYE18M256320CF-6_7.5 HYB18M256320CF-6_7.5 HYB18M256160CF-6_7.5 HYB18M256320CF HYE18M256160CF-6_7.5 HYB18M256160CF-6/7.5 HYE18M256160CF-6/7.5 HYB18M256320CF-6/7.5 HYE18M256320CF-6/7.5
OCR Text	...e 44 for 60-ball PG-VFBGA-60-4 (x16) Updated Figure 45 for 90-ball PG-VFBGA-90-3 (x32) New Qimonda Template. see Change List Rev. 1.41 Previous Revision:Rev.1.43, 2007-04 Previous Revision:Rev.1.42, 2007-03 Previous Revision:Rev.1....
Description	DRAMs for Mobile Applications
File Size	1,019.08K / 26 Page	View it Online	Download Datasheet

				Micron Technology
Part No.	MT48LC4M32LFF5
OCR Text	x16, x32 MOBILE SDRAM SYNCHRONOUS DRAM Features * Temperature Compensated Self Refresh (TCSR) * Fully synchronous; all signals registered on positive edge of system clock * Internal pipelined operation; column address can be changed ev...
Description	(MT48xxxMxxLFFx) SYNCHRONOUS DRAM
File Size	1,933.13K / 65 Page	View it Online	Download Datasheet

				OKI[OKI electronic componets]
Part No.	MR27V6466FTA MR27V6466F
OCR Text	...: CA0 to CA7 (x32) /CA0 to CA8 (x16) LSB:CA0(Both x32 and x16) RAS CAS MR DQ0 to DQ31 DQM Row Address Strobe Column Address Strobe Mode Register Set Data Output Data Output Masking Functionality depends on the combination. See the function ...
Description	From old datasheet system 4,194,304-Word x 16Bit or 2,097,152-Word x 32-Bit Synchronous One Time PROM
File Size	398.55K / 39 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	M58LW064 M58LW064BZA M58LW064A M58LW064A150NF1T M58LW064A150NF6T M58LW064A150NH1T M58LW064A150NH6T M58LW064A150T1T M58LW064A150T6T M58LW064A150ZA1T M58LW064A150ZA6T M58LW064ANF M58LW064ANH M58LW064AT M58LW064AZA M58LW064B M58LW064B150NF1T M58LW064B150NF6T M58LW064B150NH1T M58LW064B150NH6T M58LW064B150T1T M58LW064B150T6T M58LW064B150ZA1T M58LW064B150ZA6T M58LW064BNF M58LW064BNH M58LW064BT
OCR Text	x16 and x16/x32, Block Erase) Low Voltage Flash Memories PRODUCT PREVIEW s s s M58LW064A x16 organisation, M58LW064B x16/x32 selectable MULTI-BIT CELL for HIGH DENSITY and LOW COST SUPPLY VOLTAGE - VDD = 2.7V to 3.6V Supply Voltage - V...
Description	64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
File Size	316.15K / 53 Page	View it Online	Download Datasheet

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