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SavantIC
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| Part No. |
bd533 BD535
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| OCR Text |
bd533/535/537
www.datasheet4u.com
DESCRIPTION *With TO-220C package *Complement to type BD534/536/538 *Low saturation voltage APPLICATIONS *For medium power linear and switching applications
PINNING PIN 1 2 3 Base Collector;connected... |
| Description |
(bd533 - BD537) SILICON POWER TRANSISTOR
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| File Size |
119.62K /
3 Page |
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Fairchild Semiconductor, Corp.
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| Part No. |
bd533J
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| OCR Text |
bd533/535/537 npn epitaxial silicon transistor absolute maximum ratings t c =25 c unless otherwise noted electrical characteristics t c =25 c unless otherwise noted * pulse test: pw =300 s, duty cycle =1.5% pulsed symbol parameter va... |
| Description |
8 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-220AB TO-220, 3 PIN
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| File Size |
58.57K /
4 Page |
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
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| Part No. |
BD537 BD535 bd533 bd533J
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| OCR Text |
bd533/535/537
bd533/535/537
Medium Power Linear and Switching Applications
* Low Saturation Voltage * Complement to BD534, BD536 and BD538 respectively
1
TO-220 2.Collector 3.Emitter
NPN Epitaxial Silicon Transistor
Absolute Ma... |
| Description |
NPN Epitaxial Silicon Transistor
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A; Holding Current:60mA
Medium Power Linear and Switching Applications 8 A, 45 V, NPN, Si, POWER TRANSISTOR, TO-220
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| File Size |
37.18K /
4 Page |
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Continental Device India Limited
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| Part No. |
BD535K BD536J BD534K BD538K BD538J BD534 BD537
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| OCR Text |
bd533, 535, 537 npn plastic power transistors bd534, 536, 538 pnp plastic power transistors medium power linear and switching applications absolute maximum ratings 533 535 537 534 536 538 collector-base voltage (open emitter) v cbo max. 45 ... |
| Description |
50.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 8.000A Ic, 15 hFE.
50.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 20 hFE.
; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:20mA
; Package/Case:3-TO-218X; Current, It av:25A; Gate Trigger Current Max, Igt:80mA
Triac; Triac Type:Internally Triggered; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A
; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:10mA; Current, It av:6A; Gate Trigger Current Max, Igt:10mA; Holding Current:15mA RoHS Compliant: Yes
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| File Size |
24.98K /
3 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
BD538 bd533 bd533_03 BD534 BD535 BD536 BD537
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| OCR Text |
bd533 BD535 BD537 BD534 BD536 BD538
COMPLEMENTARY SILICON POWER TRANSISTORS
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BD534, BD535, BD536, BD537 AND BD538 ARE STMicroelectronics PREFERRED SALESTYPES
DESCRIPTION The bd533, BD535, and BD537 are silicon Epitaxial-Base NPN ... |
| Description |
COMPLEMENTARY SILICON POWER TRANSISTORS
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| File Size |
58.23K /
4 Page |
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