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  irff110 Datasheet PDF File

For irff110 Found Datasheets File :: 8    Search Time::1.422ms    
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    IRFF110 2474

International Rectifier
Part No. irff110 2474
OCR Text irff110 BVDSS 100V RDS(on) .60 ID 3.5A irff110 JANTX2N6782 JANTXV2N6782 REF:MIL-PRF-19500/556 100V, N-CHANNEL The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient g...
Description 100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package
From old datasheet system
HEXFET? TRANSISTOR

File Size 130.06K  /  7 Page

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    New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
Part No. irff110 IRFF111 IRFFT13 IRFF112
OCR Text ...ity product summary part number irff110 irff111 irff112 irff113 vds 100v 60v 100v 60v rds(on) o.en 0.6s7 o.sn o.sn id 3.5a 3.5a 3.0a 3.0a case style and dimensions 066 10 0341 112100261 4.57 (0.180) max. 0.4sic018i me 10 oi4> ! 14 22 '056. ...
Description IM-CHANIMEL POWER MOSFETs TO-39 PACKAGE

File Size 469.82K  /  2 Page

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    IRFF110 FN1562

INTERSIL[Intersil Corporation]
Part No. irff110 FN1562
OCR Text irff110 Data Sheet March 1999 File Number 1562.3 3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to w...
Description From old datasheet system
3.5A, 100V, 0.600 Ohm, N-Channel Power MOSFET

File Size 326.60K  /  7 Page

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    IRFF110

Seme LAB
Part No. irff110
OCR Text irff110 Dimensions in mm (inches). 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.5...
Description N-Channel MOSFET in a Hermetically sealed TO39

File Size 11.64K  /  1 Page

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    IRFF110 IRFF111

GE Solid State
Part No. irff110 IRFF111
OCR Text www.DataSheet4U.com
Description (irff110 - IRFF113) Power MOS Field-Effect Transistors

File Size 199.59K  /  5 Page

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    IRFF110 IRFF111 IRFF112 IRFF113

General Electric Solid State
GE Solid State
Part No. irff110 IRFF111 IRFF112 IRFF113
OCR Text
Description N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.

File Size 173.01K  /  5 Page

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    JANTX2N6782

International Rectifier
Part No. JANTX2N6782
OCR Text irff110 BVDSS 100V RDS(on) .60 ID 3.5A irff110 JANTX2N6782 JANTXV2N6782 REF:MIL-PRF-19500/556 100V, N-CHANNEL The HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient g...
Description 100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package

File Size 136.59K  /  8 Page

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    IRF[International Rectifier]
Part No. JANTXV2N6782 JANTX2N6782
OCR Text ...REF:MIL-PRF-19500/556] [GENERIC:irff110] N-CHANNEL Product Summary Part Number JANTX2N6782 JANTXV2N6782 BVDSS 100V RDS(on) 0.60 ID 3.5A 100 Volt, 0.60 HEXFET HEXFET technology is the key to International Rectifier's advanced line of ...
Description POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.60ohm, Id=3.5A)

File Size 196.13K  /  6 Page

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