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Part No. |
K6T2008U2M-TF10
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OCR Text |
256kx8 bit low power and low voltage cmos static ram revision history revision no. 0.0 0.1 1.0 remark advance preliminary final history design target initial draft finalize - improved v il (min.) : 0.4v ? 0.6v - erase reverse type packa... |
Description |
256K X 8 STANDARD SRAM, 100 ns, PDSO32
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File Size |
147.22K /
9 Page |
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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Part No. |
K6F2008V2E K6F2008V2E-YF70 K6F2008V2E-LF55 K6F2008V2E-LF70 K6F2008V2E-YF55
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OCR Text |
256kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 1.0 1.1 Initial draft Finalize
Draft Date
July 19 , 2001 September 27, 2001
Remark
Preliminary Final Final
Revised May... |
Description |
256kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 256kx8位超低功耗和低电压的CMOS静态RAM
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File Size |
133.16K /
9 Page |
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Samsung Semiconductor Co., Ltd.
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Part No. |
KM68U2000A
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OCR Text |
256kx8 bit low power and low voltage cmos static ram revision history revision no. 0.0 remark advance history design target draft data may 26, 1998 the attached datasheets are provided by samsung electronics. samsung electronics co., ltd.... |
Description |
256kx8 bit Low Power and Low Voltage CMOS Static RAM(256K x 8位低功耗和低电压CMOS 静RAM) 256kx8位低功耗和低电压的CMOS静态RAM56K × 8位低功耗和低电压的CMOS静态RAM)的
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File Size |
129.39K /
9 Page |
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it Online |
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Ramtron International Corp.
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Part No. |
FM21L16-60-TGTR FM22L16-55-TGTR
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OCR Text |
...as 128kx16 ? configurable as 256kx8 using /ub, /lb ? 10 14 read/write cycles ? nodelay? writes ? page mode operation to 40mhz ? advanced high-reliability ferroelectric process sram compatible ? industry std. 128kx16 sr... |
Description |
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File Size |
238.10K /
14 Page |
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it Online |
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