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ROHM[Rohm]
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| Part No. |
2SD2687S
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| OCR Text |
storobo
2SD2687S
Application Low frequency amplifier storobo External dimensions (Unit : mm)
4.0
3.0
2.0
(15Min.)
Features 1) A collector current is large. 2) VCE(sat) 250mV At lc=1.5A / lB=30mA
3Min.
0.45
2.5 5.0
(1... |
| Description |
Low frequency amplifier, storobo
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| File Size |
54.73K /
3 Page |
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it Online |
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Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
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| Part No. |
2SC5765
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| OCR Text |
storobo FLASH APPLICATIONS
Unit: mm
*
Low Saturation Voltage: VCE (sat) (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA)
Maximum Ratings (Ta = 25C)
Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Col... |
| Description |
MEDIUM POWER AMPLIFIER APPLICATIONS storobo FLASH APPLICATIONS
From old datasheet system
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| File Size |
101.30K /
4 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
2SC5765
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| OCR Text |
storobo FLASH APPLICATIONS
Unit: mm
*
Low Saturation Voltage: VCE (sat) (1) = 0.27 V (max.) (IC = 3 A/IB = 60 mA)
Maximum Ratings (Ta = 25C)
Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Col... |
| Description |
Transistor Silicon NPN Epitaxial Planar Type MEDIUM POWER AMPLIFIER APPLICATIONS storobo FLASH APPLICATIONS
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| File Size |
107.82K /
5 Page |
View
it Online |
Download Datasheet |
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Toshiba Corporation
Toshiba, Corp.
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| Part No. |
2SC5720
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| OCR Text |
storobo FLASH APPLICATIONS
* Low Saturation Voltage: VCE (sat) (1) = 0.25 V (max) (IC = 3 A/IB = 60 mA) Unit: mm
Maximum Ratings (Ta = 25C)
Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector ... |
| Description |
Transistor Silicon NPN Epitaxial Planar Type MEDIUM POWER AMPLIFIER APPLICATIONS storobo FLASH APPLICATIONS
MEDIUM POWER AMPLIFIER APPLICATIONS storobo FLASH APPLICATIONS 介质功率放大器应storobo Flash应用
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| File Size |
95.86K /
3 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
2SC2982
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| OCR Text |
storobo Flash Applications Medium Power Amplifier Applications
* High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A) * * * * Low saturation vol... |
| Description |
Transistor Silicon NPN Epitaxial Type (PCT process) storobo Flash Applications Medium Power Amplifier Applications
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| File Size |
102.58K /
4 Page |
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it Online |
Download Datasheet |
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