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				Lambda Semiconductors
Part No.	L-6-0v-12
OCR Text	This Material Copyrighted By Its Respective Manufacturer
Description	COMPLETE OVERVOLTAGE PROTECTORS L-OV SERIES
File Size	85.91K / 1 Page	View it Online	Download Datasheet

				Lambda Semiconductors
Part No.	L-6-0v-12
OCR Text	This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
Description	6 AMP OVERVOLTAGE PROTECTORS
File Size	69.08K / 2 Page	View it Online	Download Datasheet

				Aeroflex Circuit Technology
Part No.	UT54ACS190
OCR Text	...l characteristics 7 (v dd = 5.0v 10%; v ss = 0v 6 , -55 c < t c < +125 c) symbol parameter condition min max unit v il low-level input voltage 1 acts acs 0.8 .3v dd v v ih high-level input voltage 1 acts acs .5v dd .7v dd v i in in...
Description	Radiation-hardened synchronous 4-bit up-down BCD counter.
File Size	106.08K / 6 Page	View it Online	Download Datasheet

				Taiwan Semiconductor Company, Ltd
Part No.	TSM4N90
OCR Text	...urce breakdown voltage v gs = 0v, i d = 250ua bv dss 900 -- -- v drain-source on-state resistance v gs = 10v, i d = 2.0a r ds(on) -- 3.2 4.0 ? gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 2.0 -- 4.0...
Description	900V N-Channel Power MOSFET
File Size	388.61K / 10 Page	View it Online	Download Datasheet

				TY Semiconductor Co., Ltd
Part No.	STS4501
OCR Text	...akdown voltage b v ds s = v g s 0v, i d -250ua = -40 v zero g ate voltage drain c urrent i ds s v ds -32v, v g s 0v = = -1 g ate-b ody leakage i g s s v g s 20v, v ds 0v = = 100 na on c har ac t e r is t ic s a g ate t hres hold voltage v g...
Description	Super high dense cell design for low R DS
File Size	147.11K / 3 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM6L36TU
OCR Text	...(br) dss i d = 1 ma, v gs = 0v 20 ? ? drain-source breakdown voltage v (br) dsx i d = 1 ma, v gs = - 10 v 12 ? ? v drain cutoff current i dss v ds =20 v, v gs = 0v ? ? 1 a gate leakage current i gss v gs = 10 v,...
Description	Field Effect Transistor Small-signal MOSFET 2 in 1
File Size	244.33K / 9 Page	View it Online	Download Datasheet

				TY Semiconductor Co., Ltd
Part No.	RAL035P01
OCR Text	...s -- ? 10 ? av gs = ? 8v, v ds =0v drain-source breakdown voltage v (br)dss ? 12 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss -- ? 10 ? av ds = ? 12v, v gs =0v gate threshold voltage v gs (th) ? 0.3 - ? 1.0 v v ds = ? 6...
Description	TY P-channel MOSFET
File Size	305.42K / 2 Page	View it Online	Download Datasheet

				Nihon Inter Electronics Corporation
Part No.	PRHMB75E6
OCR Text	...ut-ff urrent = 600v, = 0v 1. ` ? ate-mitter eakage urrent = 20v, = 0v . ? ????g??R ollector-mitter aturation oltage = 75a, = 15v . . ` R ate...
Description	IGBT Module-Dual
File Size	240.40K / 4 Page	View it Online	Download Datasheet

				Nihon Inter Electronics Corporation
Part No.	PRHMB75B121
OCR Text	...ut-ff urrent = 1200v, = 0v . ` ? ate-mitter eakage urrent = 20v, = 0v . ? ????g??R ollector-mitter aturation oltage = 75a, = 15v . . ` R ate-mitter hreshold oltage h = ...
Description	75A 1200V
File Size	192.31K / 3 Page	View it Online	Download Datasheet

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