100a 800v pdf Datasheet P1 Full Text Search --- IC-ON-LINE


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100a 800v Datasheet PDF File

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				FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
Part No.	2SK2764-01R
OCR Text	...V Tch=25C IF=IDR VGS=0V -dIF/dt=100a/s Tch=25C Min. 800 3,5 Typ. 4,0 10 0,2 10 3,19 2 450 75 40 20 40 50 25 1,0 450 3 Max. 4,5 500 ...800v 4 2SK2764-01R FAP-IIS Series Drain-Source On-State Resistance vs. Tch RDS(on) = f(Tch)...
Description	N-channel MOS-FET
File Size	292.33K / 2 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FS7KM-16A FS7KM-16
OCR Text	...itions ID = 1mA, VGS = 0V IGS = 100a, VDS = 0V VGS = 25V, VDS = 0V VDS = 800v, VGS = 0V ID = 1mA, VDS = 10V ID = 3A, VGS = 10V ID = 3A, VGS = 10V ID = 3A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 800 30 -- -- 2 -- -- 4.2 -- --...
Description	HIGH-SPEED SWITCHING USE
File Size	42.60K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation POWEREX[Powerex Power Semiconductors]
Part No.	FS7KM-16 FS7KM-16A
OCR Text	...itions ID = 1mA, VGS = 0V IGS = 100a, VDS = 0V VGS = 25V, VDS = 0V VDS = 800v, VGS = 0V ID = 1mA, VDS = 10V ID = 3A, VGS = 10V ID = 3A, VGS = 10V ID = 3A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 800 30 -- -- 2 -- -- 4.2 -- --...
Description	MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
File Size	47.52K / 4 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SGW25N120
OCR Text	... 3 Jul-02 SGW25N120 100a Ic 100a tp=1s 15s IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 80A 50s 10A 200s 1ms...800v, VGE = +15V/0V, RG = 22) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0...
Description	IGBTs & DuoPacks - 25A 1200V TO247AC IGBT Fast IGBT in NPT-technology TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,49A I(C),TO-247AC
File Size	375.62K / 11 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8011JLL APT8011
OCR Text	...ime (IS = -ID[Cont.], dl S/dt = 100a/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100a/s) Peak Diode Recovery dv/ dt 5 1000 34.0 10 Q V/ns THERMAL CHARACTERISTICS Symbol RqJC RqJA Characteristic Junction to Case Junc...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.67K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8011 APT8011JFLL
OCR Text	...Time (IS = -ID [Cont.], di/dt = 100a/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100a/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100a/s) 560 1600 2.5 17.7 16.1 36.2 C Amps THERMAL CHARACTERISTICS Symbol RqJC ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.29K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT8014JFLL
OCR Text	...Time (IS = -ID [Cont.], di/dt = 100a/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100a/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100a/s) AL IC HN EC ION TT CE MA AN OR DV NF A I ID = ID [Cont.] @ 25C VDD = 0.5 VDSS RG...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.42K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT8014JLL
OCR Text	...ime (IS = -ID[Cont.], dl S/dt = 100a/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100a/s) Peak Diode Recovery dv/ dt 5 930 29.0 10 Q V/ns THERMAL CHARACTERISTICS Symbol RqJC RqJA Characteristic Junction to Case Junct...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.73K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8014L2FLL
OCR Text	...Time (IS = -ID [Cont.], di/dt = 100a/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100a/s) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100a/s) AL IC HN EC ION E T AT NC RM VA FO AD IN ID = ID [Cont.] @ 25C VDD = 0.5 VDSS RG...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	52.75K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8014L2LL
OCR Text	...ime (IS = -ID[Cont.], dl S/dt = 100a/s) Peak Diode Recovery dv/ 5 AL IC HN EC ION TT CE MA AN OR DV NF A I 161 VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX UNIT Amps Volts ns C 52 208 1.3 ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	51.58K / 2 Page	View it Online	Download Datasheet

For 100a 800v Found Datasheets File :: 1013 Search Time::1.25ms
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