11.40-12.60v pdf Datasheet P1 Full Text Search --- IC-ON-LINE


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11.40-12.60v Datasheet PDF File

For 11.40-12.60v Found Datasheets File :: 5531 Search Time::3.297ms
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				Sanyo Electric Co., Ltd. SANYO[Sanyo Semicon Device]
Part No.	2SA2023 2SC5611
OCR Text	...3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 Specifications Note * ( ) : 2SA2023 Absolute Maximum Ratings at Ta = 25C Par...40 --1 1 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT00512 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT0...
Description	60V / 5A High-Speed Switching Applications 0V / 5A条高速开关应 PNP/NPN Epitaxial Planar Silicon Transistors NPN Epitaxial Planar Silicon Transistors 60V / 5A High-Speed Switching Applications PNP Epitaxial Planar Silicon Transistors 60V / 5A High-Speed Switching Applications
File Size	40.45K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text	...junction temperature. (See fig. 11) Starting TJ = 25C, L = 260H RG = 25, IAS = 50A, VGS =10V (See Figure 12) ISD 50A, di/dt 230A/s, VDD ...40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , ...
Description	60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?) Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?
File Size	122.02K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1010E
OCR Text	...junction temperature. (See fig. 11) Pulse width 400s; duty cycle 2%. This is a typical value at device destruction and represents op...40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , J...
Description	Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?
File Size	143.91K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF1407L IRF1407S IRF1407STRR
OCR Text	...- --- --- --- --- --- 160 35 54 11 150 150 140 4.5 7.5 5600 890 190 5800 560 1100 Max. --- --- 0.0078 4.0 --- 20 250 200 -200 250 52 81 -...40 -20 0 20 40 60 80 V GS = 10V 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) TJ , ...
Description	75V Single N-Channel HEXFET Power MOSFET in a TO-262 package Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?) Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A) Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A) TRANSISTOR \| MOSFET \| N-CHANNEL \| 75V V(BR)DSS \| 100A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 75V的五（巴西）直\| 100号A（丁）\|63AB
File Size	158.12K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1407
OCR Text	...ts C/W www.irf.com 1 10/11/01 IRF1407 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ ...40 -20 0 20 40 60 80 V GS = 10V 100 120 140 160 180 VGS, Gate-to-Source Voltage (V) TJ , ...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A? Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?) POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ) Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A) Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)
File Size	126.10K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1607
OCR Text	...junction temperature. (See fig. 11). as Coss while VDS is rising from 0 to 80% VDSS . Starting TJ = 25C, L = 0.21mH Calculated continuous ...40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , J...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)
File Size	179.50K / 9 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text	...junction temperature. (See fig. 11) Starting TJ = 25C, L = 370H RG = 25, IAS = 43A, VGS=10V (See Figure 12) ISD 43A, di/dt 300A/s, VDD ...40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , ...
Description	HEXFET Power MOSFET HEXFET功率MOSFET 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
File Size	122.50K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF2807
OCR Text	...junction temperature. (See fig. 11) Pulse width 400s; duty cycle 2%. This is a typical value at device destruction and represents op...40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , J...
Description	Power MOSFET(Vdss=75V, Id=82A?) Power MOSFET(Vdss=75V, Id=82A)
File Size	149.88K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF2907Z IRF2907ZL IRF2907ZS IRF2907S IRF2B907Z IRF2B907ZL IRF2B907ZS
OCR Text	...junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25C, L=0.11mH, RG = 25, IAS = 75A, VGS =10V. Part not recommended for ...40 20 0 25 50 75 100 125 150 175 T C , Case Temperature (C) 1.5 1.0 0.5 -60 -40 -20 0 20 40...
Description	AUTOMOTIVE MOSFET 汽车MOSFET 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
File Size	359.66K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3000
OCR Text	...--- --- --- --- Typ. --- 22 4.7 11 8.2 7.2 23 23 730 100 20 940 39 87 Max. Units Conditions --- S VDS = 50V, ID = 0.96A 33 ID = 0.96A 7.1 nC...40 -20 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ, Junction Temperature...
Description	300V Single N-Channel HEXFET Power MOSFET in a SO-8 package SMPS MOSFET
File Size	119.33K / 8 Page	View it Online	Download Datasheet

For 11.40-12.60v Found Datasheets File :: 5531 Search Time::3.297ms
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