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IRF[International Rectifier]
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| Part No. |
IRF5N3205
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| OCR Text |
...0V, RG= 25
ISD 55A, di/dt 217a/s, Pulse width 300 s; Duty Cycle 2%
VDD 55V, TJ 150C
Case Outline and Dimensions -- SMD-1
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310... |
| Description |
55V Single N-Channel Hi-Rel MOSFET in a SMD-1 package
POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.008ohm, Id=55A*)
SURFACE MOUNT (SMD-1) 55V, N-CHANNEL
POWER MOSFET N-CHANNEL(Vdss=55V/ Rds(on)=0.008ohm/ Id=55A*)
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| File Size |
116.76K /
7 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
IPB80N04S2L-03 IPP80N04S2L-03 SP0002-19063 SP0002-20158
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| OCR Text |
....5K/W the chip is able to carry 217a at 25C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos
2) 3)
Defined by design. Not subject to production test. See diagram 13 Qualified at -20V and +20V.
4) 5)... |
| Description |
OptiMOSPower-Transistor
OptiMOS㈢ Power-Transistor
OptiMOS? Power-Transistor
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| File Size |
150.94K /
8 Page |
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it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPP80N04S2L-03 SPB80N04S2L-03
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| OCR Text |
...W the chip is able to carry ID= 217a at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one la... |
| Description |
Low Voltage MOSFETs - TO220/263; 80A; 40V; LL; 3.4mOhm
OptiMOS Power-Transistor
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| File Size |
305.87K /
8 Page |
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it Online |
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