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Renesas
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| Part No. |
FS20KM-6a
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| OCR Text |
...7v 5v p d = 35w 5v 10v v gs = 20v v gs = 20v 6v 0 0.1 0.2 0.4 0.3 10 0 10 1 23 57 10 2 23 5 7 v gs = 10v 20v 0 4 8 12 16 20 04 81216 20 ...6a rev.1.00, aug.20.20 04, page 4 of 6 transfer characteristics (typical) gate-source voltage v ... |
| Description |
Transistors>Switching/MOSFETs
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| File Size |
97.88K /
7 Page |
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it Online |
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Renesas
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| Part No. |
FS40SM-6a
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| OCR Text |
...812 16 5.5v 6v 5v 7v v gs = 20v p d = 250w v gs = 20v 10v 5.5v 0 0.04 0.08 0.12 0.16 0.20 10 0 210 1 357 2 10 2 357 2 10 3 35 7 v gs ...6a rev.1.00, aug.20.20 04, page 4 of 6 transfer characteristics (typical) gate-source voltage v ... |
| Description |
Transistors>Switching/MOSFETs
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| File Size |
99.06K /
7 Page |
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it Online |
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Diodes
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| Part No. |
DMN4034SSS
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| OCR Text |
...i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics gate threshold voltage v gs ( th ) 1.0 ? 3.0 v i d = 250 a, v ds ...6a 0.039 0.059 v gs = 4.5v, i d = 5a forward transconductance (notes 7 & 8) g fs ? 20.5 ? s... |
| Description |
40V N-CHANNEL ENHANCEMENT MODE MOSFET
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| File Size |
700.00K /
8 Page |
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it Online |
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Diodes
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| Part No. |
DMN4034SSD
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| OCR Text |
...i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics gate threshold voltage v gs ( th ) 1.0 ? 3.0 v i d = 250 a, v ds ...6a 0.039 0.059 v gs = 4.5v, i d = 5a forward transconductance (notes 9 & 10) g fs ? 20.5 ? ... |
| Description |
40V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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| File Size |
716.97K /
8 Page |
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it Online |
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SANYO
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| Part No. |
2SJ655
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| OCR Text |
... VGS=-10V ID=--6a, VGS=-4V VDS=-20v, f=1MHz VDS=-20v, f=1MHz VDS=-20v, f=1MHz Ratings min --100 --1 10 --1.2 9 13 100 136 2090 155 108 136 190 --2.6 typ max Unit V
A A
V S m m pF pF pF
Marking : J655
Continued on next page.
Any... |
| Description |
High Output MOSFETs
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| File Size |
41.95K /
5 Page |
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it Online |
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ADVANCED POWER ELECTRONICS CORP
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| Part No. |
AP4501AGM
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| OCR Text |
...ss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =6a - 8.4 13.5 nc q gs gate-source charge v ds =24v - 1.4 - nc q gd gate-drain ("miller") charge v gs =4.5v - 4.7 - nc t d(on) turn-on delay time 2 v ds ... |
| Description |
7 A, 30 V, 0.028 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
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| File Size |
116.21K /
7 Page |
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Diodes
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| Part No. |
DMN4031SSD DMN4031SSD-13
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| OCR Text |
... i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics (note 8) gate threshold voltage v gs ( th ) 1.6 2.4 3.0 v v ds...6a ? 44 50 v gs = 4.5v, i d = 5a forward transfer admittance |y fs | ? 11 ? s v ds = ... |
| Description |
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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| File Size |
232.92K /
6 Page |
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it Online |
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| Part No. |
ADVANCEDPOWERELECTRONICSCORP-AP4525GEM
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| OCR Text |
...c q gs gate-source charge v ds =20v - 1.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 4 - nc t d(on) turn-on delay time 2 v ds =20v - 7 - ns t r rise time i d =6a - 20 - ns t d(off) turn-off delay time r g =3 , v gs =10v - 20 - ns t... |
| Description |
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| File Size |
115.74K /
7 Page |
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it Online |
Download Datasheet |
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Price and Availability
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