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  30v 4a Datasheet PDF File

For 30v 4a Found Datasheets File :: 3357    Search Time::1.422ms    
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    ST Microelectronics
Part No. STA50813TR
OCR Text ...teristcs (v l = 3.3v; v cc = 30v; t amb = 25c ; f sw =384 unless otherwise specified) symbol parameter value unit v cc dc supply volt...4a iout=4a q4 q1 q3 m64 inb m63 d03au1517 m58 ina m57 dtin(a) duty cycle=a duty cycle=b duty cycle a...
Description 40V 4.5A QUAD POWER HALF BRIDGE

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    AO5800

Alpha & Omega Semiconductors
Part No. AO5800
OCR Text ....5 0.5 0.8 1 0.4 41 VGS=0V, VDS=30v, f=1MHz 9 6 39.2 VGS=10V, VDS=30v, RL=75, RGEN=3 IF=0.4a, dI/dt=100A/s, VGS=-9V 35.7 261 79 11.3 7.5 14 50 1.6 3 1.9 1.6 Min 60 1 5 1 100 2.5 Typ Max Units V A A nA V A S V A pF pF pF ns ns ns ns ns nC ...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 129.15K  /  4 Page

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    AO5800E

Alpha & Omega Semiconductors
Part No. AO5800E
OCR Text ....5 0.5 0.8 1 0.4 41 VGS=0V, VDS=30v, f=1MHz 9 6 39.2 VGS=10V, VDS=30v, RL=75, RGEN=3 IF=0.4a, dI/dt=100A/s, VGS=-9V 35.7 261 79 11.3 7.5 14 50 1.6 3 1.9 1.6 Min 60 1 5 1 100 2.5 Typ Max Units V A A nA V A S V A pF pF pF ns ns ns ns ns nC ...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 125.58K  /  4 Page

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    2SD717

Wing Shing Computer Components
Part No. 2SD717
OCR Text ... = 3.5A IC=4a,IB1=-IB2=0.4a,VCC=30v 1.5 0.4 LIMITING VALUES SYMBOL VCESM VCEO VEBO IC IB Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Emitter-base oltage (open colloctor) Col...
Description Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION)

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    ZXMN6A08E6

Zetex Semiconductors
Part No. ZXMN6A08E6
OCR Text ...delay time t d(on) 2.6 ns v dd =30v, i d =1.5a r g =6.0 ,v gs =10v rise time t r 2.1 ns turn-off delay time t d(off) 12.3 ns fall time t f 4.6 ns gate charge q g 4.0 nc v ds =30v,v gs =5v, i d =1.4a total gate charge q g 5.8 nc v ds =30v,...
Description N-channel MOSFET

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    2SK4195LS

Sanyo Semicon Device
Part No. 2SK4195LS
OCR Text ...mA, VGS=0V VDS=400V, VGS=0V VGS=30v, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=2A ID=2A, VGS=10V VDS=30v, f=1MHz VDS=30v, f=1MHz VDS=30v, f=1MHz Se...4a VDS=200V, VGS=10V, ID=4a VDS=200V, VGS=10V, ID=4a IS=4a, VGS=0V Ratings min 500 100 100 3 0.85 1....
Description N-Channel Silicon MOSFET General-Purpose Switching Device Applications

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    2SK4136

Sanyo Semicon Device
Part No. 2SK4136
OCR Text ...mA, VGS=0V VDS=400V, VGS=0V VGS=30v, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=4a ID=4a, VGS=10V VDS=30v, f=1MHz VDS=30v, f=1MHz VDS=30v, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test...
Description N-Channel Silicon MOSFET General-Purpose Switching Device Applications

File Size 51.56K  /  4 Page

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    Wing Shing Electronic
Part No. D717
OCR Text ...i c =4a,i b1 =-i b2 =0.4a,v cc =30v 0.4 1 .0- s symbol parameter conditions min max unit v cesm collector-emitter voltage peak value v be = 0v - 70 v v ceo collector-emitter voltage (open base) - 70 v v ebo emitter-base oltage (open colloc...
Description Search --To 2SD717

File Size 112.98K  /  1 Page

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    SSM4532M

List of Unclassifed Manufacturers
ETC[ETC]
Silicon Standard Corp.
Part No. SSM4532M
OCR Text ...D1 D1 G2 S2 BV ID DSS +30v 50m +5A -30v 70m -4a Low on-resistance Fast switching R DS(ON) P-ch BV DSS RDS(ON) ID SO-8 S1 G1 Description MOSFETs from Silicon Standard Corp. provide the designer with the best...
Description COMPLEMENTARY N AND P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

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    SPN3400W SPN3400WS23RG

SYNC POWER Crop.
Part No. SPN3400W SPN3400WS23RG
OCR Text ...3-3l) part marking ? 30v/5.4a,r ds(on) = 38m ? @v gs =10v ? 30v/4.6a,r ds(on) = 42m ? @v gs =4.5v ? 30v/3.8a,r ds(on) = 55m ? @v gs =2.5v ? super high density cell design for extremely low r ds (on) ? exceptional on...
Description N-Channel Enhancement Mode MOSFET

File Size 197.44K  /  8 Page

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