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NANYA TECHNOLOGY CORP
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| Part No. |
M1U25664TUH4A0F-5A
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| OCR Text |
...red ddr2 sdram module based on 32mx16 ddr2 sdram features ? jedec standard 240-pin dual in-line memory module ? 32mx64 ddr2 unbuffered dimm based on 32mx16 ddr2 sdram ? performance: pc2-3200 pc2-4200 pc2-5300 sp... |
| Description |
32M X 64 DDR DRAM MODULE, 0.6 ns, DMA240
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| File Size |
127.77K /
14 Page |
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Download Datasheet
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NANYA TECHNOLOGY CORP
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| Part No. |
NT512D64SH8B0GN-75B
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| OCR Text |
... device, organized as 64mx8 and 32mx16 ddr sdram performance: pc2700 pc2100 speed sort 6k 75b dimm cas latency 2.5 2.5 unit f ck clock frequency 166 133 mhz t ck clock cycle 6 7.5 ns f dq dq burst frequency 333 ... |
| Description |
64M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
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| File Size |
508.34K /
18 Page |
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it Online |
Download Datasheet |
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HYNIX SEMICONDUCTOR INC
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| Part No. |
DU5162ETR-FAC DU5162ETR-E3C H5DU5182ETR-E3C
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| OCR Text |
...l 66pin tsop-ii h5du5162etr-xxc 32mx16 normal consumption h5du5162etr-xxl 32mx16 low power consumption
rev. 1.0 / nov. 2009 ... |
| Description |
32M X 16 DDR DRAM, 0.65 ns, PDSO66
32M X 16 DDR DRAM, 0.75 ns, PDSO66
64M X 8 DDR DRAM, 0.75 ns, PDSO66
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| File Size |
377.16K /
30 Page |
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Download Datasheet |
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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
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| Part No. |
M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554BG3-CD5_CC M470T6554BGZ0-CD5_CC M470T6554BGZ3-CD5_CC M470T6554BZ0-LD5_CC M470T6554BZ3-LD5_CC M470T2953BY0-LD5_CC M470T3354BG0-CD5_CC M470T3354BG3-CD5_CC M470T3354BGZ0-CD5_CC M470T3354BGZ3-CD5_CC M470T2953BSY3-CD5_CC M470T3354BZ0-LD5_CC M470T3354BZ3-LD5_CC M470T2953BY3-LD5_CC M470T2953BS3-CD5_CC M470T2953BSY0-CD5_CC M470T2953BXX M470T2953BY0 M470T2953BY0-LD5/CC M470T3354BZ0-LD5/CC M470T6554BZ0-LD5/CC M470T2953BS0-CD5/CC M470T3354BG0-CD5/CC M470T6554BG0-CD5/CC M470T3354BZ3-LD5/CC M470T2953BY3-LD5/CC M470T6554BZ3-LD5/CC M470T3354BG3-CD5/CC M470T6554BG3-CD5/CC M470T2953BSY0-CD5/CC M470T2953BSY3-CD5/CC M470T2953BS3-CD5/CC M470T3354BGZ0-CD5/CC M470T3354BGZ3-CD5/CC M470T6554BGZ3-CD5/CC M470T6554BGZ0-CD5/CC
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| OCR Text |
...4 128Mx64 Component Composition 32mx16(K4T51163QB)*4 32mx16(K4T51163QB)*4 32mx16(K4T51163QB)*4 32mx16(K4T51163QB)*4 32mx16(K4T51163QB)*8 32mx16(K4T51163QB)*8 32mx16(K4T51163QB)*8 32mx16(K4T51163QB)*8 64Mx8(K4T51083QB)*16 64Mx8(K4T51083QB)*1... |
| Description |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
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| File Size |
325.20K /
19 Page |
View
it Online |
Download Datasheet |
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