| |
|
 |
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
FL14KM-8a
|
| OCR Text |
.................................. 400v G rDS (ON) (MAX) .............................................................. 0.55 G ID ................8a
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25C)
Symbol V (BR) DSS V (BR) GSS... |
| Description |
Power MOSFETs: FL Series
HIGH-SPEED SWITCHING USE
|
| File Size |
63.65K /
4 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
International Rectifier, Corp.
|
| Part No. |
FL14KM-8a
|
| OCR Text |
.................................. 400v G rDS (ON) (MAX) .............................................................. 0.55 G ID ................8a
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25C)
Symbol V (BR) DSS V (BR) GSS... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 400v V(BR)DSS | 14A I(D) | TO-220FN 晶体管| MOSFET的| N沟道| 400v五（巴西）直|14A条（丁）|20FN
|
| File Size |
58.88K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Mitsubishi Electric Corporation
|
| Part No. |
CR02AM-8a CR2AM-8a
|
| OCR Text |
.................................. 400v * IGT ......................................................................... 100A APPLICATION Strobe...8a
LOW POWER USE
GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol IRRM IDRM VTM VGT VG... |
| Description |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE GLASS PASSIVATION TYPE
|
| File Size |
74.39K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
SANYO
|
| Part No. |
2SC4430
|
| OCR Text |
...IB1=1.6A, IB2=-3.2A, RL=50, VCC=400v tstg tf IC=8a, IC=8a, IB1=1.6A, IB1=1.6A, IB2=-3.2A, RL=50, IB2=-3.2A, RL=50, VCC=400v VCC=400v
Switching Time Test Circuit
No.2853-2/4
2SC4430
No.2853-3/4
2SC4430
Specifications of any... |
| Description |
NPN Triple Diffused Planar Silicon Transistor 800V/12A Switching Regulator Applications
|
| File Size |
112.48K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| Part No. |
AOT11S60
|
| OCR Text |
...9 w q g,typ 11nc e oss @ 400v 2.7 m j symbol v ds v gs i dm i ar e ar e as mosfet dv/dt ruggedness peak diode recovery dv/dt h t j ,...8a, t j =150c drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c m a v ds =0v, v gs =30v... |
| Description |
600V 11A a MOS TM Power Transistor
|
| File Size |
615.79K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
SEMIWELL[SemiWell Semiconductor]
|
| Part No. |
SFP840
|
| OCR Text |
...25 C VDS = 500V, VGS = 0V VDS = 400v, TC = 125 C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250uA VGS =10 V, ID = 4A 500 0.6 1...8a see fig. 12.
(Note 4, 5)
VDD =250V, ID =8a, RG =50 see fig. 13.
(Note 4, 5)
22 25 130 3... |
| Description |
125W Power MOSFET, 500V Vdss, 8a Id, 0.85Om Rds
N-Channel MOSFET
|
| File Size |
870.98K /
7 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
