400v-0.21-16a pdf Datasheet P1 Full Text Search --- IC-ON-LINE


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400v-0.21-16a Datasheet PDF File

For 400v-0.21-16a Found Datasheets File :: 212 Search Time::1.907ms
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				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FS7KM-16A FS7KM-16
OCR Text	...= 125C 12 12 75C 8 400V 600V 8 25C 4 4 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE...
Description	HIGH-SPEED SWITCHING USE
File Size	42.60K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation POWEREX[Powerex Power Semiconductors]
Part No.	FS7KM-16 FS7KM-16A
OCR Text	...= 125C 12 12 75C 8 400V 600V 8 25C 4 4 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE...
Description	MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
File Size	47.52K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8028JVR APT5010JVR
OCR Text	... VDS=100V VDS=250V 12 VDS=400V 10 5 8 4 150 300 450 600 750 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE ...
Description	POWER MOS V 800V 28A 0.280 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	71.26K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8056BVFR
OCR Text	... VDS=100V VDS=250V 12 VDS=400V 8 TJ =+150C 10 5 TJ =+25C 4 50 100 150 200 250 300 350 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, SOURCE-TO...
Description	POWER MOS V 800V 16A 0.560 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	63.50K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8056BVR
OCR Text	... VDS=100V VDS=250V 12 VDS=400V 8 TJ =+150C 10 5 TJ =+25C 4 50 100 150 200 250 300 350 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, SOURCE-TO...
Description	POWER MOS V 800V 16A 0.560 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	61.19K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	FS7UM-16A FS50UMJ-06 FS5VS-9
OCR Text	...= 125C 12 12 75C 8 400V 600V 8 25C 4 4 0 0 20 40 60 80 100 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE...
Description	HIGH-SPEED SWITCHING USE
File Size	40.63K / 4 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	SKB02N60 SKP02N60
OCR Text	...uency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 118) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C) 35W 30W 25W 20W 15W 10W 5W 0W 25C 7A 6A 5A 4A 3A 2A 1A 0A 25C IC, COLLECTOR C...
Description	IGBTs & DuoPacks - 2A 600V TO220AB IGBT Diode IGBTs & DuoPacks - 2A 600V TO263AB SMD IGBT Diode Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
File Size	392.65K / 13 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FAN5059
OCR Text	... Setpoint ILOAD = 0.8A,VOUT = 2.400V VOUT = 2.000V VOUT = 1.550V TA = 0 to 70C,VOUT = 2.000V VOUT = 1.550V VIN = 4.75V to 5.25V ILOAD = 0.8A to 12.5A 20MHz BW, ILOAD = 18A VOUT = 2.000V VOUT = 1.550V3 ILOAD = 0.8A to 18A, VOUT = 2.000V VOUT...
Description	High Performance Programmable Synchronous
File Size	191.62K / 18 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4PH50UD IRG4PH50
OCR Text	...itions 250 IC = 24A 40 nC VCC = 400V See Fig. 8 80 VGE = 15V -- TJ = 25C -- ns IC = 24A, VCC = 800V 170 VGE = 15V, RG = 5.0 260 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. 9, 10, 18 4.6 -- TJ = 150C, See Fig. ...
Description	1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.78V @Vge=15V Ic=24A)
File Size	226.41K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGPH40FD2
OCR Text	...ditions 67 IC = 17A 16 nC VCC = 400V 26 See Fig. 8 -- TJ = 25C -- ns IC = 17A, V CC = 800V 550 VGE = 15V, R G = 10 630 Energy losses include...0 A TJ = 25C See Fig. 11 TJ = 125C 15 V R = 200V 380 nC TJ = 25C See Fig. 880 TJ = 125C 16 di/dt = 2...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V @Vge=15V Ic=17A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=17A)
File Size	380.38K / 8 Page	View it Online	Download Datasheet

For 400v-0.21-16a Found Datasheets File :: 212 Search Time::1.907ms
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