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  510 100 1000 Datasheet PDF File

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    2SC5004 2SC5004-T1 2SC5004NE58219 2SC5004-T2

NEC[NEC]
NEC Corp.
NEC, Corp.
Part No. 2SC5004 2SC5004-T1 2SC5004NE58219 2SC5004-T2
OCR Text ... .481 .485 .486 .494 .497 .502 .510 .517 .525 .532 .543 .548 .558 .566 .573 .585 .590 .603 S11 ANG -23.5 -45.3 -67.1 -86.6 -104.4 -118.5 -13...100.4 -105.6 -110.9 -116.4 5 2SC5004 S-PARAMETER VCE = 5 V, IC = 1 mA, ZO = 50 FREQUENCY MH...
Description    NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
SC70/&#181;DFN, Single/Dual Low-Voltage, Low-Power &#181;P Reset Circuits
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD NPN硅外延晶体管3引脚超超级迷你模
NPN epitaxial-type silicon transistor

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    2SC5008 2SC5008-T1 2SC5008NE68019 2SC5008-T1-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5008 2SC5008-T1 2SC5008NE68019 2SC5008-T1-T2
OCR Text ...0 MAG .870 .809 .733 .661 .575 .510 .440 .387 .345 .309 .283 .261 .246 .234 .227 .227 .231 .231 .233 .237 .242 .247 .256 .264 .274 .282 .292...100.00 200.00 300.00 400.00 500.00 600.00 700.00 800.00 900.00 1000.00 1100.00 1200.00 1300.00 1400....
Description NPN epitaxial-type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits

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    IRF2907Z IRF2907ZL IRF2907ZS IRF2907S IRF2B907Z IRF2B907ZL IRF2B907ZS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2907Z IRF2907ZL IRF2907ZS IRF2907S IRF2B907Z IRF2B907ZL IRF2B907ZS
OCR Text ...5 19 140 97 100 5.0 13 7500 970 510 3640 650 1020 --- --- 4.5 4.0 --- 20 250 200 -200 270 --- --- --- --- --- --- --- --- --- --- --- --- --- --- pF Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 75A...
Description AUTOMOTIVE MOSFET 汽车MOSFET
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package

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    IRF3808L IRF3808S RF3808S

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3808L IRF3808S RF3808S
OCR Text ...0 ns TJ = 25C, IF = 82A --- 340 510 nC di/dt = 100A/s T Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) U Coss eff. ...100 I D, Drain-to-Source Current (A) TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V ...
Description 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)
Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET(减振钢板基本\u003d 75V的,的Rdson)\u003d 0.007ohm,身份证\u003d 106A章?

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    IRF3808 IRF3808PBF

International Rectifier
Part No. IRF3808 IRF3808PBF
OCR Text ...0 ns TJ = 25C, IF = 82A --- 340 510 nC di/dt = 100A/s T Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Q Repetitive...100 I D, Drain-to-Source Current (A) TOP BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V ...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?

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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840AL IRF840AS IRF840ASTRR
OCR Text ...y Typ. --- --- --- Max. 510 8.0 13 Units mJ A mJ Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ...100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ...y Typ. --- --- --- Max. 510 8.0 13 Units mJ A mJ Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Fl...100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

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    NCX10S48050 NCX10S48050Y NCX10S24050 NCX10S24050Y NCX10S48033 NCX10S48033Y NCX10S NCX10S24033 NCX10S24033Y

CANDD[C&D Technologies]
Part No. NCX10S48050 NCX10S48050Y NCX10S24050 NCX10S24050Y NCX10S48033 NCX10S48033Y NCX10S NCX10S24033 NCX10S24033Y
OCR Text ...1 2.0 3.1 2.0 mW 270 280 500 510 270 280 500 510 mW 26 25 44 45 26 25 44 45 % 78 82 79 82 78 82 79 82 INPUT CHARACTERISTICS1 Pa...100% Voltage Error Input specified range Temperature Coefficient of Output Voltage (slope) Deviation...
Description    Isolated 10W Single Output DC/DC Converters

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    NJM2732 NJM2732D NJM2732E NJM2732M NJM2732RB1 NJM2732V

ETC
New Japan Radio
Part No. NJM2732 NJM2732D NJM2732E NJM2732M NJM2732RB1 NJM2732V
OCR Text ...d MIN. 60 48 68 2.9 2.75 0 TYP. 510 1 50 5 84 63 83 2.95 0.05 2.85 0.15 - (V+=3V, Ta=25uC) MAX. 880 5 250 100 0.1 0.25 3 UNIT A mV nA nA dB dB dB V V V V V RL=2k CMR+: 1.5VVCM3V CMR-: 0VVCM1.5V (Note3) +V /V =1.2V ~ 2.0V RL=20k RL=20...
Description DUAL OP-AMP, 5000 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDIP8
Full-Swing Input and Output type Dual Operational Amplifier

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