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TOSHIBA
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| Part No. |
TPC8066-H
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| OCR Text |
...n) = 15 m ? (typ.) (v gs = 4.5 v) (5) low leakage current: i dss = 10 a (max) (v ds = 30 v) (6) enhancement mode: v th = 1.3 to 2.3 ...25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise... |
| Description |
Power MOSFET (N-ch single VDSS≤30V)
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| File Size |
249.47K /
9 Page |
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TOSHIBA
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| Part No. |
TPC8058-H
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| OCR Text |
...) = 3.2 m ? (typ.) (v gs = 4.5 v) (5) low leakage current: i dss = 10 a (max) (v ds = 30 v) (6) enhancement mode: v th = 1.3 to 2.3 ...25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless other... |
| Description |
Power MOSFET (N-ch single VDSS≤30V)
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| File Size |
226.14K /
9 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TPC8055-H
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| OCR Text |
...) = 2.1 m ? (typ.) (v gs = 4.5 v) (5) low leakage current: i dss = 10 a (max) (v ds = 30 v) (6) enhancement mode: v th = 1.3 to 2.3 ...25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless other... |
| Description |
Power MOSFET (N-ch single VDSS≤30V)
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| File Size |
224.57K /
9 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TPC8051-H
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| OCR Text |
...t configuration 8 6 1 2 3 7 5 4 start of commercial production 2008-10
tpc8051-h 2013-11-01 2 thermal characteristics characteristi...25 , i ar = 13 a note 4: repetitive rating: pulse width limited by maximum channel temperatu... |
| Description |
Power MOSFET (N-ch single 60V<VDSS≤150V)
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| File Size |
202.27K /
7 Page |
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it Online |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TPCM8001-H
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| OCR Text |
...ers Notebook PC Applications
0.5
Unit: mm
0.8 8 0.25 5
Portable Equipment Applications
* * * * * * * Small footprint due to small and thin package High speed switching Low drain-source ON resistance: RDS (ON) = 7 mO (typ.) High for... |
| Description |
MOSFET TPC Series
High Speed and High Efficiency DC-DC Converters, Notebook PC Applications, Portable Equipment Applications
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| File Size |
38.24K /
4 Page |
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it Online |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TPCA8016-H
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| OCR Text |
...lications
6.00.3 0.50.1 8 1.27 5.00.2
Unit: mm
0.40.1 5 0.05 M A
* * * * * * *
Small footprint due to small and thin package High...25 75 45 2.8 1.6 45 25 2.7 150 -55 to 150
Unit V V V A W W
8
5
1,2,3SOURCE 5,6,7,8DRAIN
... |
| Description |
MOSFET TPC Series
High-Speed and High-Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications
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| File Size |
155.12K /
4 Page |
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it Online |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TPCA8014-H
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| OCR Text |
...
Unit: mm
0.50.1 8 1.27 0.40.1 5 0.05 M A
High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Ap...25*Z ) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Sin... |
| Description |
MOSFET TPC Series
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
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| File Size |
37.67K /
4 Page |
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it Online |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TPCA8010-H
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| OCR Text |
...TATIVE
Unit: mm
1.27 8 0.40.1 5
0.50.1
0.05 M A
Low drain-source ON resistance: R DS (ON) = 380mO (typ.) High forward transfer ad...25*Z ) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche ener... |
| Description |
MOSFET TPC Series
High Speed and High Efficiency DC-DC Converters
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| File Size |
37.14K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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