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  6-gf-762 Datasheet PDF File

For 6-gf-762 Found Datasheets File :: 7    Search Time::1.328ms    
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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF0910A 0910A
OCR Text ...AL CHARACTERISTICS ID vs. VGS 6 VDS=3V Ta=25C 6 VGS=-0.5V/Step Ta=25C VGS=0V 4 4 ID vs. VDS 2 2 0 -3 -2 -1 0 0 0 1 2 3 4 5 6 GATE TO SOURCE VOLTAGE VGS(V) DRAIN TO SOURCE VOLTAGE VDS(V) ...
Description MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L S BAND POWER GaAs FET
From old datasheet system

File Size 25.38K  /  3 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF0910A_1 MGF0910A MGF0910A1
OCR Text ...AL CHARACTERISTICS ID vs. VGS 6 VDS=3V Ta=25C 6 VGS=-0.5V/Step Ta=25C VGS=0V 4 4 ID vs. VDS 2 2 0 -3 -2 -1 0 0 0 1 2 3 4 5 6 GATE TO SOURCE VOLTAGE VGS(V) DRAIN TO SOURCE VOLTAGE VDS(V) ...
Description L, S BAND POWER GaAs FET

File Size 176.99K  /  4 Page

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    MGF0805A

Mitsubishi Electric Semiconductor
Part No. MGF0805A
OCR Text ...25 deg. C Freq. (GHz) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 S11 (mag) 0.935 0.942 0.943 0.943 0.943 0.942 0.939 0.939 0.937 0.937 0.935 0.936 0.935 0.932 0.934 0.935 0.933 0....
Description L & S Band GaAs FET [ SMD non-matched ]

File Size 113.02K  /  8 Page

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    MRF6V14300HR3 MRF6V14300HSR3

Freescale Semiconductor, Inc
Part No. MRF6V14300HR3 MRF6V14300HSR3
OCR Text ...0 mA, Pout = 330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 sec, Duty Cycle = 12% Power Gain -- 18 dB Drain Efficiency -- 60....GF Drp H2 & H3 -- -- -- -- -- 10 0.5 0.3 - 20 - 65 -- -- -- -- -- dB dB dBc dBc All Spurs Below ...
Description RF Power Field Effect Transistors

File Size 398.32K  /  10 Page

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    MRF6V14300HSR3 MRF6V14300HR3

Freescale Semiconductor, Inc
Part No. MRF6V14300HSR3 MRF6V14300HR3
OCR Text ...0 mA, Pout = 330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 sec, Duty Cycle = 12% Power Gain -- 18 dB Drain Efficiency -- 60....GF Drp H2 & H3 -- -- -- -- -- 10 0.5 0.3 --20 --65 -- -- -- -- -- dB dB dBc dBc All Spurs Below ...
Description RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

File Size 633.54K  /  10 Page

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    MGF0913A MGF0913A11

Mitsubishi Electric Semiconductor
Part No. MGF0913A MGF0913A11
OCR Text ... 0.648 170.52 1.930 15.19 0.063 6.75 0.537 -140.26 1.41 11.04 3800 0.611 165.48 1.751 4.44 0.070 2.20 0.565 -141.48 1.47 9.91 4200 0.563 159.35 1.626 -6.74 0.079 -3.15 0.582 -142.64 1.53 8.84 4600 0.504 150.60 1.566 -18.46 0.091 -9.28 0.592...
Description High-power GaAs FET (small signal gain stage)

File Size 106.86K  /  4 Page

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    MB140

Lite-On Technology Corporation
Part No. MB140
OCR Text ...(A) 0.8 TJ =100 0.1 0.6 0.01 0.4 0.2 RESISTIVE OR INDUCTIVE LOAD 0.001 TJ =25 0 25 50 75 100 125 150 0.0001 0 5 10 15 20 25 30 35 40 45 TL , LEAD TEMPERATURE () Fig.3 - Maxmun Non-Repetitive Peak Forward...
Description SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

File Size 33.58K  /  2 Page

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