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  600v 39a a mos tm power transi Datasheet PDF File

For 600v 39a a mos tm power transi Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    2N5401

SeCoS Halbleitertechnologie GmbH
Part No. 2N5401
Description PNP Transistor Plastic-Encapsulate Transi stors

File Size 157.64K  /  1 Page

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    2SC2411

SeCoS Halbleitertechnologie GmbH
Part No. 2SC2411
Description NPN Transistor Plastic-Encapsulate Transi stors

File Size 221.24K  /  2 Page

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    2N4401

SeCoS Halbleitertechnologie GmbH
Part No. 2N4401
Description NPN Transistor Plastic-Encapsulate Transi stors

File Size 315.71K  /  2 Page

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    ESDA14V2-2BF ESDA14V2-2BF3 ESDA14V2-2BX

Stmicroelectronics
Part No. ESDa14V2-2BF ESDa14V2-2BF3 ESDa14V2-2BX
Description Quad bidirectional Transi array for ESD protection

File Size 148.65K  /  9 Page

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    IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30ASTRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFBC30aS IRFBC30L IRFBC30aL IRFBC30aSTRL IRFBC30aSTRR
Description 600v Single N-Channel HEXFET power mosFET in a D2-Pak package
600v Single N-Channel HEXFET power mosFET in a TO-262 package
HEXFET? power mosFET
power mosFET(Vdss=600v/ Rds(on)max=2.2ohm/ Id=3.6a)
600v,3.6a,N-Channel HEXFET power mosFET for SMPS(600v,3.6a,N沟道 HEXFET 功率mos场效应管,用于开关模式电
power mosFET(Vdss=600v, Rds(on)max=2.2ohm, Id=3.6a) 功率mosFET(减振钢板基本\u003d 600v电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6a

File Size 145.74K  /  10 Page

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    IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL
Description 600v Single N-Channel HEXFET power mosFET in a TO-262 package
600v Single N-Channel HEXFET power mosFET in a D2-Pak package
power mosFET(Vdss=600v, Rds(on)=1.2ohm, Id=6.2a)
power mosFET(Vdss=600v Rds(on)=1.2ohm Id=6.2a)
CaP CER 1500PF 100V 20% X7R 0603 功率mosFET(减振钢板基本\u003d 600v电压的Rds(on)\u003d 1.2ohm,身份证\u003d 6.2a

File Size 346.70K  /  10 Page

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    STGB3NB60SD STGB3NB60SDT4

ST Microelectronics
Stmicroelectronics N.V.
StmICROELECTRONICS[Stmicroelectronics]
Part No. STGB3NB60SD STGB3NB60SDT4
Description N-CHaNNEL 3a - 600v D2PaK power MESHIGBT N沟道3a 600v的D2PaK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2a; Reel Quantity:1500; Capacitance:100pF; Forward Current:5a; Forward Voltage:12V; Holding Current:100ua; Mounting Type:Surface Mount N沟道3a 600v的IGBT的采用D2PaK powerMESH
N-CHaNNEL 3a - 600v D2PaK power MESH IGBT
N-CHaNNEL 3a - 600v D2PaK powerMESH IGBT
N-CHaNNEL 3a - 600v D2PaK power MESH⑩ IGBT

File Size 335.41K  /  8 Page

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    IRFIBC30G IRFIBC30

IRF[International Rectifier]
Part No. IRFIBC30G IRFIBC30
Description 600v Single N-Channel HEXFET power mosFET in a TO-220 FullPak (Iso) package
power mosFET(Vdss=600v, Rds(on)=2.2ohm, Id=2.5a)
power mosFET(Vdss=600v/ Rds(on)=2.2ohm/ Id=2.5a)

File Size 168.35K  /  6 Page

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    IRFIBC40G IRFIBC40 IRFIBC40GPBF

IRF[International Rectifier]
Part No. IRFIBC40G IRFIBC40 IRFIBC40GPBF
Description 600v Single N-Channel HEXFET power mosFET in a TO-220 FullPak (Iso) package
power mosFET(Vdss=600v, Rds(on)=1.2ohm, Id=3.5a)
power mosFET(Vdss=600v/ Rds(on)=1.2ohm/ Id=3.5a)

File Size 169.63K  /  6 Page

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    IRFIBC20G IRFIBC20 IRFIBC20GPBF

IRF[International Rectifier]
Part No. IRFIBC20G IRFIBC20 IRFIBC20GPBF
Description 600v Single N-Channel HEXFET power mosFET in a TO-220 FullPak (Iso) package
power mosFET(Vdss=600v/ Rds(on)=4.4ohm/ Id=1.7a)
power mosFET(Vdss=600v, Rds(on)=4.4ohm, Id=1.7a)

File Size 166.48K  /  6 Page

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For 600v 39a a mos tm power transi Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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