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  7a 650v Datasheet PDF File

For 7a 650v Found Datasheets File :: 97    Search Time::1.125ms    
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    STF15NM60N

STMICROELECTRONICS
Part No. STF15NM60N
OCR Text ...n resistance v gs = 10v, i d = 7a 0.270 0.299 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% forward transconductance v ds =15v, i d = 7a 10 s c iss ...
Description 14 A, 600 V, 0.299 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 592.14K  /  18 Page

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    STF/15NM60N STF15NM60N

STMicroelectronics
Part No. STF/15NM60N STF15NM60N
OCR Text ...n resistance v gs = 10v, i d = 7a 0.270 0.299 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% forward transconductance v ds =15v, i d = 7a 10 s c iss ...
Description N-channel Power MOSFET

File Size 632.02K  /  18 Page

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    STI15NM60N

STMicroelectronics
Part No. STI15NM60N
OCR Text ...n resistance v gs = 10v, i d = 7a 0.270 0.299 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% forward transconductance v ds =15v, i d = 7a 10 s c iss ...
Description N-channel Power MOSFET

File Size 632.02K  /  18 Page

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    STB15NM60N

STMicroelectronics
Part No. STB15NM60N
OCR Text ...n resistance v gs = 10v, i d = 7a 0.270 0.299 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% forward transconductance v ds =15v, i d = 7a 10 s c iss ...
Description N-channel Power MOSFET

File Size 632.02K  /  18 Page

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    IPA65R225C7

Infineon Technologies AG
Part No. IPA65R225C7
OCR Text ... rr - 890 - ns v r =400v, i f =7a,d i f /d t =55a/s; see table 8 reverse recovery charge q rr - 6 - c v r =400v, i f =7a,d i f /d t =55a...650vcoolmos?c7powertransistor ipa65r225c7 rev.2.0,2013-10-22 final data sheet 5electrica...
Description high power thyristor diode

File Size 1,730.63K  /  15 Page

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    PJF7N65 PJP7N65

Pan Jit International Inc.
Part No. PJF7N65 PJP7N65
OCR Text 7a , 650v, RDS(ON)=1.4@VGS=10V, ID=3.5A * * * * * * Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 20...
Description 650v N-Channel Enhancement Mode MOSFET

File Size 194.08K  /  5 Page

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    SSU07N65SL SSU07N65SL-15

SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
Part No. SSU07N65SL SSU07N65SL-15
OCR Text 7a , 650v , r ds(on) 1.4 n-ch enhancement mode power mosfet 08-oct-2013 rev. a page 1 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. to - 263 rohs compliant product a...
Description N-Ch Enhancement Mode Power MOSFET

File Size 562.38K  /  5 Page

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    FSL106HR

Fairchild Semiconductor
Part No. FSL106HR
OCR Text ...n delay v dd = 350v, i d = 0.7a 8.6 ns t r rise time v dd = 350v, i d = 0.7a 9.7 ns t d(off) turn-off delay v dd = 3...650v, v gs = 0v 90 100 110 khz ? f osc switching frequency variation v gs = 10v, v gs = 0...
Description Green Mode Fairchild Power Switch (FPS?

File Size 944.96K  /  13 Page

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    FSL106MR

Fairchild Semiconductor
Part No. FSL106MR
OCR Text ...n delay v dd = 350v, i d = 0.7a 8.6 ns t r rise time v dd = 350v, i d = 0.7a 9.7 ns t d(off) turn-off delay v dd = 3...650v, v gs = 0v 61 67 73 khz ? f osc switching frequency variation v gs = 10v, v gs = 0v,...
Description Green Mode Fairchild Power Switch (FPS?

File Size 1,019.54K  /  13 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FQA7N65C
OCR Text 7a, 650v, RDS(on) = 1.4 @VGS = 10 V Low gate charge ( typical 28 nC) Low Crss ( typical 12 pF) Fast switching 100% avalanche tested Improved dv/dt capability (R) Description These N-Channel enhancement mode power field effect transis...
Description 650v N-Channel MOSFET

File Size 714.37K  /  8 Page

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