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  8 dtch Datasheet PDF File

For 8 dtch Found Datasheets File :: 24    Search Time::1.484ms    
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    MRF21010 MRF21010LR MRF21010LS MRF21010LSR1 MRF21010LR1

Freescale (Motorola)
MOTOROLA[Motorola Inc]
Motorola, Inc
Part No. MRF21010 MRF21010LR MRF21010LS MRF21010LSR1 MRF21010LR1
OCR Text ...2.2 pF Chip Capacitor, B Case 1.8 pF Chip Capacitor, B Case 0.5 pF Chip Capacitor, B Case 10 F, 35 V Tantalum Chip Capacitors 1 nF Chip Capacitors, B Case 5.6 pF Chip Capacitors, B Case 470 F, 63 V Electrolytic Capacitor 10 pF Chip Capacito...
Description 2170 MHz, 10 W, 28 V Lateral N&#8211;Channel Broadband RF Power MOSFET
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 538.54K  /  8 Page

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    MRF21090 MRF21090R3 MRF21090SR3

Freescale (Motorola)
MOTOROLA[Motorola Inc]
Motorola, Inc
Part No. MRF21090 MRF21090R3 MRF21090SR3
OCR Text ...VDS(on) -- 2 3 -- 7.2 3 3.8 0.1 -- 4 5 0.6 S Vdc Vdc Vdc Crss -- 4.2 -- pF Gps 10 11.7 -- dB 30 33 -- % IMD -- - 30 - 27.5 dBc IRL -- - 12 - 9.0 dB G...
Description 2170 MHz, 90 W, 28 V Lateral N&#8211;Channel RF Power MOSFET
RF Power Field Effect Transistors

File Size 553.11K  /  8 Page

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    MAPLST2122-015CF

Tyco Electronics
Part No. MAPLST2122-015CF
OCR Text 8/20/03 Preliminary MAPLST2122-015CF Features Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. ...dtch 25.0 22.5 20.0 17.5 15.0 12.5 10.0 7.5 Efficiency (%) Gain(dB) Gain (150mA) 10.0 9.5 ...
Description RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 15W, 28V

File Size 234.56K  /  5 Page

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    MRF21120R6

Freescale Semiconductor, Inc
Part No. MRF21120R6
OCR Text ...(Q) VDS(on) -- 2.5 3 -- 4.8 3 3.9 0.38 -- 3.8 5 0.5 S Vdc Vdc Vdc Crss -- 2.8 -- pF Gps dB 10.5 30 11.4 34....dtch, 1 Perch 14 Gps 12 Gps , POWER GAIN (dB) 10 8 6 4 ACPR DOWN ACPR UP 2 1.0 10 VDD = 28 Vdc I...
Description RF Power Field Effect Transistor

File Size 350.24K  /  12 Page

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    MHVIC2115NR2

Freescale Semiconductor, Inc
MOTOROLA
Part No. MHVIC2115NR2
OCR Text ...RFin VDS1 VDS2 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 N.C. VDS3/RFout VDS3/RFout VDS3/RFout VDS3/RFout VDS3/RFout VDS3/RFout N.C. VDS1 VDS2 3 Stages IC (Top View) Note: Exposed backside flag is source terminal for transist...
Description 2170 MHz, 26 V, 23/34 dBm W??DMA RF LDMOS Wideband Integrated Power Amplifier
RF LDMOS Wideband Integrated Power Amplifier

File Size 412.03K  /  12 Page

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    MOTOROLA
Part No. MHVIC2114NR2
OCR Text ... @ 5 MHz Offset, 64 dtch, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 32 dB ACPR -- - 58 dBc * P1dB = 14 Watts, Gain Flatness = 0.2 dB from 2110 to 2170 MHz * Capable of Handling 3:1 VSWR, @ 27 Vdc, 2140 MHz, 15 Watts CW Output ...
Description 2100 MHz, 27 V, 23 dBm Single W鈥揅DMA RF LDMOS Wideband Integrated Power Amplifier

File Size 530.81K  /  12 Page

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    MHVIC2114NR2

Freescale Semiconductor, Inc
Part No. MHVIC2114NR2
OCR Text ... @ 5 MHz Offset, 64 dtch, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 32 dB ACPR -- - 58 dBc * P1dB = 14 Watts, Gain Flatness = 0.2 dB from 2110 to 2170 MHz * Capable of Handling 3:1 VSWR, @ 27 Vdc, 2140 MHz, 15 Watts CW Output ...
Description RF LDMOS Wideband Integrated Power Amplifier

File Size 530.81K  /  12 Page

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    MRF21060L MRF21060 MRF21060LR3 MRF21060LSR3

Freescale Semiconductor, Inc
MOTOROLA
Part No. MRF21060L MRF21060 MRF21060LR3 MRF21060LSR3
OCR Text ...nel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 12.5 dB Drain Efficiency -- 15% ACPR @ 5 MHz Offset -- - 4...dtch -20 -25 -30 -35 -40 ACPR Gps -45 -50 -55 2 10 4 8 12 6 14 Pout, OUTPUT POWER (WATTS Avg.) W-CD...
Description RF Power Field Effect Transistors
2110??170 MHz, 60 W, 28 V Lateral N??hannel RF Power MOSFETs

File Size 373.40K  /  8 Page

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    MRF21060R3 MRF21060SR3 MRF21060

Freescale (Motorola)
Motorola, Inc
Part No. MRF21060R3 MRF21060SR3 MRF21060
OCR Text ...pacitors, ATC #100B9R1JCA500X 0.8 pF - 8.0 pF Variable Capacitor, Johanson Gigatrim 0.4 pF - 4.5 pF Variable Capacitor, Johanson Gigatrim 1 ...dtch ADJACENT CHANNEL POWER RATIO (dB) IMD, INTERMODULATION DISTORTION (dBc) 40 35 30 25 20 15 10 5 ...
Description 2170 MHz, 60 W, 28 V Lateral N&#8211;Channel RF Power MOSFET
RF Power Field Effect Transistors

File Size 547.55K  /  8 Page

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    Motorola
Part No. MHPA21010
OCR Text ...nce for VDD = 28 Volts, Vbias = 8 Volts, IDQ = 550 mA, Channel Bandwidth = 3.84 MHz, Adjacent Channels at 5 MHz, ACPR Measured in 3.84 MHz ...dtch. * Adjacent Channel Power: -50 dBc @ 30 dBm, 5 MHz Channel Spacing * Power Gain: 23.7 dB Min (@...
Description The RF Line UMTS BAND RF LINEAR LDMOS AMPLIFIER
The RF Line UMTS BAND RF LINEAR LDMOS AMPLIFIER

File Size 323.07K  /  4 Page

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For 8 dtch Found Datasheets File :: 24    Search Time::1.484ms    
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