85ns vdd in -0 3 to 7 0v silic pdf Datasheet P1 Description --- IC-ON-LINE


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85ns vdd in -0 3 to 7 0v silic Datasheet PDF File

For 85ns vdd in -0 3 to 7 0v silic Found Datasheets File :: 21+ Page :: | <1> | 2 | 3 |

					友顺科技股份有限公司 UTC[Unisonic Technologies]
Part No.	UTCHE8550 HE8550-to-92
Description	PNP EPITAXIAL silic ON TRANSIStoR
File Size	71.78K / 2 Page	View it Online	Download Datasheet

					intel
Part No.	GE28F256L18B85 GE28F256L18T85 GE28F128L18T85 PH28F128L18B85
Description	1.8V, 85ns, 256Mbit StrataFlash Wireless Memory 1.8V, 85ns, 128Mbit StrataFlash Wireless Memory 1.8V, 85ns, 128Mbit lead-free StrataFlash Wireless Memory
File Size	1,294.42K / 106 Page	View it Online	Download Datasheet

					Hynix Semiconductor, inc. Hynix Semiconductor inc. ETC HYNIX[Hynix Semiconductor] http://
Part No.	HY62256A HY62256AJ HY62256AJ-I HY62256ALJ HY62256ALJ-I HY62256ALLJ HY62256ALLP HY62256ALLR1 HY62256ALLT1 HY62256ALP HY62256ALP-I HY62256ALR1 HY62256ALR2-I HY62256ALT1 HY62256ALT1-I HY62256AP HY62256AP-I HY62256AR1 HY62256AR2-I HY62256AT1 HY62256AT1-I HY62256AJ-55 HY62256AJ-85 HY62256AJ-I-70 HY62256AJ-I-55 HY62256AJ-I-85 HY62256ALJ-85 HY62256ALJ-I-70 HY62256ALLJ-85 HY62256ALLJ-55 HY62256ALLJ-70 HY62256AJ-70 HY62256ALJ-I-85 HY62256ALLP-55
Description	32Kx8bit CMOS SRAM, standby current=25uA, 70ns 32Kx8bit CMOS SRAM, standby current=25uA, 55ns 32Kx8bit CMOS SRAM, standby current=25uA, 85ns 32Kx8bit CMOS SRAM, standby current=100uA, 70ns 32Kx8bit CMOS SRAM, standby current=100uA, 85ns 32Kx8bit CMOS SRAM, standby current=1mA, 70ns 32Kx8bit CMOS SRAM, standby current=1mA, 85ns 32Kx8bit CMOS SRAM, standby current=1mA, 55ns 32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM Circular Connector; No. of Contacts:22; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No 32Kx8bit CMOS SRAM JT 22C 22#22D SKT RECP 32Kx8bit CMOS SRAM
File Size	819.02K / 14 Page	View it Online	Download Datasheet

					Hitachi Semiconductor
Part No.	HM62V256LFP-8ULT HM62V256LTM-8UL
Description	32,768-word x 8-bit low voltage operation CMOS static RAM, 85ns
File Size	113.49K / 14 Page	View it Online	Download Datasheet

					White Electronic Designs
Part No.	EDI9F416128C-BN EDI9F416128C85BNC
Description	85ns; 5V power supply; 4 x 128K x 16 static RAM CMOS module Differential Receiver/Equalizer; Temperature Range: -40°C to 85°C; Package: 16-QSOP T&R
File Size	457.10K / 6 Page	View it Online	Download Datasheet

					Aeroflex Circuit Technology
Part No.	5962H3829435BNC 5962H3829435BNX 5962H3829435BXA 5962H3829435BXC 5962H3829435BXX 5962H3829435SNA 5962H3829435SNC 5962H3829435SNX 5962H3829435SXA 5962H3829435SXC 5962H3829436BNA 5962H3829436BNC 5962H3829436BNX 5962H3829436BXA 5962H3829436BXC 5962H3829436BXX 5962H3829436SNA 5962H3829436SNC 5962H3829436SNX 5962H3829436SXA 5962H3829436SXC 5962H3829436SXX 5962H3829437BNA 5962H3829437BNC 5962H3829437BXC 5962H3829437BXX 5962R3829435BNX 5962R3829436BNX 5962R3829437BNX 5962R3829435SNA 5962R3829435SNC 5962R3829435SNX 5962H3829437SNC 5962R3829436SNC 5962R3829437SNC 5962H3829437SXX 5962R3829435SXX 5962R3829437SXX 5962R3829436SXX 5962R3829436SNA 5962R3829436SNX 5962R3829436SXA 5962R3829435BNA 5962R3829435BNC 5962R3829437BNC 5962R3829437BNA 5962R3829435SXC 5962R3829435SXA 5962R3829437SNX 5962H3829437SNX 5962R3829436BNA 5962R3829437SXC 5962R3829437SXA 5962H3829437SXC 5962H3829437SXA 5962R3829435BXA 5962R3829435BXX 5962R3829435BXC 5962H3829437SNA 5962R3829436BXA 5962R3829437BXX
Description	Radiation-Hardened 8Kx8 SRAM: SMD. total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 1E6 rads(Si). 85ns access time. QML class Q. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 1E6 rads(Si). 85ns access time. QML class V. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 1E6 rads(Si). 75ns access time. QML class Q. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 1E6 rads(Si). 75ns access time. QML class V. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 1E6 rads(Si). 55ns access time. QML class Q. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 1E6 rads(Si). 55ns access time. QML class Q. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 1E6 rads(Si). 55ns access time. QML class Q. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 5E5 rads(Si). 75ns access time. QML class Q. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 5E5 rads(Si). 85ns access time. QML class V. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 5E5 rads(Si). 85ns access time. QML class V. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 5E5 rads(Si). 85ns access time. QML class V. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 1E6 rads(Si). 55ns access time. QML class V. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 1E6 rads(Si). 55ns access time. QML class V. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish optional. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 5E5 rads(Si). 75ns access time. QML class V. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 5E5 rads(Si). 85ns access time. QML class Q. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish gold. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 5E5 rads(Si). 55ns access time. QML class Q. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 5E5 rads(Si). 75ns access time. QML class Q. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 5E5 rads(Si). 55ns access time. QML class V. Lead finish solder. Radiation-Hardened 8Kx8 SRAM: SMD. total dose 1E6 rads(Si). 55ns access time. QML class V. Lead finish solder.
File Size	99.86K / 15 Page	View it Online	Download Datasheet

					White Electronic Designs Corporation
Part No.	WS512K32-70 WS512K32-85 WS512K32-100 WS512K32F-85H2CE WS512K32F-85H2CEA WS512K32F-85H2IE WS512K32F-85H2ME WS512K32F-85H2MEA WS512K32F-85H2QE WS512K32F-85H2QEA WS512K32N-85H2CE WS512K32N-85H2CEA WS512K32N-85H2IEA WS512K32N-85H2MEA WS512K32N-85H2QE WS512K32N-85H2QEA
Description	85ns; 5V power supply; 512K x 32 SRAM module, SMD 5962-94611 512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????0ns锛? 512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????00ns锛? 512Kx32 SRAM Module(512Kx32静态RAM模块（存取时5ns 512Kx32 SRAM Module(512Kx32静态RAM模块（存取时0ns
File Size	156.13K / 12 Page	View it Online	Download Datasheet

					Hitachi Semiconductor
Part No.	HM6167LP-8 HM6167P-6 HM6167P-8
Description	16384-word x 1-bit high speed CMOS static RAM, 100ns 16384-word x 1-bit high speed CMOS static RAM, 85ns
File Size	290.88K / 7 Page	View it Online	Download Datasheet

					toSHIBA
Part No.	TC554001FTL-10v TC554001FTL-85V
Description	524, 288 words x 8 bit static RAM, access time 100ns 524, 288 words x 8 bit static RAM, access time 85ns
File Size	420.55K / 10 Page	View it Online	Download Datasheet

					Hitachi Semiconductor
Part No.	HN27C256H HN27C256HFP-10T HN27C256HFP-85T HN27C256HG-85 HN27C256HP-85 HN27C256HG-70 HN27C256HP-10
Description	256K (32K x 8-bit) UV and OTP EPROM, 70ns 256K (32K x 8-bit) UV and OTP EPROM, 85ns 256K (32K X 8-BIT) UV AND OPT EPROM
File Size	405.22K / 10 Page	View it Online	Download Datasheet

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