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LSI CORP
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Part No. |
AGR19030EF
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OCR Text |
... gain (v dd =28vdc, p out = 6 w avg., 2-carrier n-cdma, i dq =350ma, f1 = 1930 mhz, f2 = 1932.5 mhz, and f1 = 1987.5 mhz, f2 = 1990 mhz) g ps 15.5 16 ? db drain efficiency (v dd =28vdc, p out = 6 w avg., 2-carrier n-cdma, i dq =350ma, f1 ... |
Description |
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
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File Size |
179.87K /
11 Page |
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Infineon Technologies
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Part No. |
PTFA181001F
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OCR Text |
... quiescent current (a) evm rms (avg. %) . -90 -80 -70 -60 -50 -40 -30 -20 -10 modulation spectrum (dbc) evm 400 khz 600 khz edge modulation spectrum performance v dd = 28 v, i dq = 750 ma, ? = 1879.8 mhz -100 -80 -60 -40 -20 37 39 41 43... |
Description |
Thermally-Enhanced High Power RF LDMOS FET
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File Size |
416.43K /
11 Page |
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it Online |
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Part No. |
BU52001GUL-E2
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OCR Text |
...period (ms) supply current (avg) (a) output type package bu52001gul 2.40 3.30 +/-3.7 0.8 50 8.0 cmos vcsp50l1 bu52015gul 1.65 3.30 +/-3.0 0.9 50 5.0 cmos vcsp50l1 bu52051nvx 1.65 3.30 +/-3.0 0.9 50 5.0 c... |
Description |
MAGNETIC FIELD SENSOR-HALL EFFECT, 0.8-5.5mT, 0.40-2.60V, SQUARE, SURFACE MOUNT
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File Size |
862.97K /
21 Page |
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it Online |
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Price and Availability
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