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22001 74LS08 ES51961 G4BC30 LD8051AH 1SM5933B 0LB00 7720S
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  control devices - high voltage Datasheet PDF File

For control devices - high voltage Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    GC4530-00 GC4531-00 GC4532-00 GC4533-00 GC4511-00 GC4512-00 GC4510-00 GC4531 GC4532 GC4530

Microsemi Corporation
Part No. GC4530-00 GC4531-00 GC4532-00 GC4533-00 GC4511-00 GC4512-00 GC4510-00 GC4531 GC4532 GC4530
Description control devices high voltage NIP Diodes TM

File Size 162.61K  /  4 Page

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    M521

M/A-COM Technology Solutions, Inc.
Part No. M521
Description Positive voltage control of GaAs MMIC control devices

File Size 95.26K  /  3 Page

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    GC44101 GC4495 GC4491 GC4494 GC4490 GC4492 GC4493 GC4433 GC4432-115 GC4430-115 GC4431-30 GC4413 GC4411 GC4412

Microsemi Corporation
MICROSEMI CORP-LOWELL
Part No. GC44101 GC4495 GC4491 GC4494 GC4490 GC4492 GC4493 GC4433 GC4432-115 GC4430-115 GC4431-30 GC4413 GC4411 GC4412
Description control devices - high voltage PIN DIODES
300 V, SILICON, PIN DIODE

File Size 148.73K  /  4 Page

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    FVC2300-BK FVC3100-BK

Bourns Inc.
Bourns Electronic Solutions
Part No. FVC2300-BK FVC3100-BK
Description voltage control devices

File Size 192.20K  /  3 Page

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    2SA1384 E000523

Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. 2SA1384 E000523
Description TRANSISTOR (high voltage control, PLASMA DISPLAY, NIXIE TYBE DRIVER , CATHODE RAY TUBE BRIGHTNESS control APPLICATIONS)
high voltage control APPLICATIONS PLASMA DISPLAY
From old datasheet system

File Size 266.79K  /  5 Page

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    IXYS, Corp.
IXYS[IXYS Corporation]
Part No. CS20-22MOF1
Description high voltage Phase control Thyristorin high voltage ISOPLUS i4-PAC-TM 28.26 A, 2200 V, SCR
Phase control Thyristors: PowerThyristor for Line Frequency Rectification

File Size 73.45K  /  2 Page

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    GC4270 GC4271 GC4220 GC4211 GC4212 GC4222 GC4223 GC4214 GC4210 GC4213 GC4215 GC4221 GC4273 GC4272 GC4224 GC4225 GC4275 G

Microsemi Corporation
Part No. GC4270 GC4271 GC4220 GC4211 GC4212 GC4222 GC4223 GC4214 GC4210 GC4213 GC4215 GC4221 GC4273 GC4272 GC4224 GC4225 GC4275 GC4274
Description TM control devices - high SPEED PIN DIODES

File Size 143.72K  /  4 Page

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    GC4320 GC4321 GC4322 GC4323

Microsemi Corporation
Part No. GC4320 GC4321 GC4322 GC4323
Description control devices high Speed NIP Diodes

File Size 171.50K  /  4 Page

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    2SA1721 E000549

Toshiba Semiconductor
Toshiba Corporation
Part No. 2SA1721 E000549
Description From old datasheet system
high voltage control APPLICATIONS PLASMA DISPLAY
TRANSISTOR (high voltage control, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS control APPLICATIONS

File Size 174.58K  /  3 Page

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    CREE POWER
Part No. W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

File Size 273.34K  /  17 Page

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For control devices - high voltage Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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