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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
SML100W18
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| Description |
N-CHANNEL ENHANCEMENT mode HIGH voltage POWER MOSFETS
N-Channel Enhancement mode High voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
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| File Size |
25.75K /
2 Page |
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it Online |
Download Datasheet
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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
SML80H12 SML100H11
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| Description |
N-CHANNEL ENHANCEMENT mode HIGH voltage POWER MOSFETS
N-Channel Enhancement mode High voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω))
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| File Size |
26.03K /
2 Page |
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it Online |
Download Datasheet |
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TT electronics Semelab Limited
Semelab(Magnatec)
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| Part No. |
SML100A9
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| Description |
N-CHANNEL ENHANCEMENT mode HIGH voltage POWER MOSFETS
N-Channel Enhancement mode High voltage Power MOSFET(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
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| File Size |
20.76K /
2 Page |
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it Online |
Download Datasheet |
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SemeLAB
SEME-LAB[Seme LAB]
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| Part No. |
SML80A12 SML100A9
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| Description |
N-CHANNEL ENHANCEMENT mode HIGH voltage POWER MOSFETS
N-Channel Enhancement mode High voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω))
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| File Size |
20.46K /
2 Page |
View
it Online |
Download Datasheet |
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TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
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| Part No. |
SML80H14
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| Description |
N-CHANNEL ENHANCEMENT mode HIGH voltage POWER MOSFETS 13.5 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA
N-Channel Enhancement mode High voltage Power MOSFET(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω))
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| File Size |
26.04K /
2 Page |
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it Online |
Download Datasheet |
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SEME-LAB[Seme LAB]
SemeLAB
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| Part No. |
SML50W40
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| Description |
N-Channel Enhancement mode High voltage Power MOSFET(Vdss:500V,Id(cont):40A,Rds(on):0.12惟)(N娌??澧?己??楂???????OS?烘?搴??(Vdss:500V,Id(cont):40A,Rds(on):0.12惟))
N-CHANNEL ENHANCEMENT mode HIGH voltage POWER MOSFETS
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| File Size |
25.74K /
2 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
NDH854P
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| Description |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity P Channel Current Id cont. 5.1 A voltage Vgs th max. 4.5 V voltage Vds max 30 V
P-Channel Enhancement mode Field Effect Transistor
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| File Size |
84.65K /
8 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
NDH8436
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| Description |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 5.8 A voltage Vgs th max. 4.5 V voltage Vds max 30 V
N-Channel Enhancement mode Field Effect Transistor
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| File Size |
293.10K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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