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  gium nitride 28v 100w rf power Datasheet PDF File

For gium nitride 28v 100w rf power Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    NPT1010 NPT1010-15

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
List of Unclassifed Man...
Part No. NPT1010 NPT1010-15
Description Gallium nitride 28v, 100w rf power Transistor

File Size 1,223.32K  /  10 Page

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    NPT2022 NPT2022-15

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
Part No. NPT2022 NPT2022-15
Description Gallium nitride 48V, 100w, DC-2 GHz HEMT

File Size 2,594.15K  /  10 Page

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    NPT2010

M/A-COM Technology Solutions, Inc.
Part No. NPT2010
Description Gallium nitride 48V, 100w, DC-2.2 GHz HEMT

File Size 2,407.33K  /  10 Page

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    SANYO[Sanyo Semicon Device]
Part No. STK4231V STK4231
Description AF power Amplifier(Split power Supply)(100w+100w min, THD=0.08%)

File Size 71.00K  /  3 Page

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    STK433-100-E

Sanyo Semicon Device
Part No. STK433-100-E
Description Thick-Film Hybrid IC 2-channel class AB audio power IC, 100w 100w

File Size 178.36K  /  11 Page

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    Sunspirit Electronic Ltd
Part No. STK433-090LF STK433-100LF STK433-120LF STK433-130LF
Description 2-channel class AB audio power IC, 100w 100w

File Size 347.21K  /  2 Page

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    CREE power
Part No. W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

File Size 273.34K  /  17 Page

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    STK415-130-E

Sanyo Semicon Device
Part No. STK415-130-E
Description 100 W, 2 CHANNEL, AUDIO AMPLIFIER, ZFM19
2-Channel power Switching Audio power IC, 100w 100w

File Size 179.69K  /  12 Page

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    2SC3153 2SC3153M

MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
Part No. 2SC3153 2SC3153M
Description TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 6A I(C) | TO-247VAR 晶体管|晶体管|叩| 800V的五(巴西)总裁| 6A条一(c)|47VAR
power TRANSISTORS(6A/800V/100w)
power TRANSISTORS(6A,800V,100w)
power TRANSISTORS(6A800V100w)

File Size 126.43K  /  3 Page

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    NPTB00004

M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
Part No. NPTB00004
Description Gallium nitride 28v, 5W rf power Transistor

File Size 944.68K  /  10 Page

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For gium nitride 28v 100w rf power Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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