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For idnom Found Datasheets File :: 7    Search Time::2.734ms    
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    BF1105R

Philips Semiconductors
Part No. BF1105R
OCR Text ...dB) VDS = 5 V; VG2nom = 4 V; idnom = Iself bias; fw = 50 MHz; funw = 60 MHz; Tamb = 25 C. Fig.11 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values (see Fig.18). 1997 Dec 02 6 Philips Sem...
Description N-channel dual-gate MOS-FETs
File Size 151.80K  /  16 Page

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    Philips
Part No. BF1105WR BF1105R BF1105 BF1105_R_WR_3
OCR Text ...dB) VDS = 5 V; VG2nom = 4 V; idnom = Iself bias; fw = 50 MHz; funw = 60 MHz; Tamb = 25 C. Fig.11 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values (see Fig.18). 1997 Dec 02 6 Philips Sem...
Description N-channel dual-gate MOS-FETs
From old datasheet system
File Size 113.97K  /  16 Page

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    Philips
Part No. BF1109WR BF1109R BF1109 BF1109_R_WR_2
OCR Text ...dB) VDS = 9 V; VG2nom = 4 V; idnom = 12 mA; fw = 50 MHz; funw = 60 MHz; Tamb = 25 C. Fig.11 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values (see Fig.18). 1997 Dec 08 6 Philips Semicond...
Description N-channel dual-gate MOS-FETs
From old datasheet system
File Size 109.84K  /  16 Page

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    BF1105WR BF1105 BF1105R

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BF1105WR BF1105 BF1105R
OCR Text ...dB) VDS = 5 V; VG2nom = 4 V; idnom = Iself bias; fw = 50 MHz; funw = 60 MHz; Tamb = 25 C. Fig.11 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values (see Fig.18). 1997 Dec 02 6 Philips Sem...
Description CONNECTOR
N-channel dual-gate MOS-FETs
File Size 152.29K  /  16 Page

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    BF1109WR BF1109 BF1109R

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BF1109WR BF1109 BF1109R
OCR Text ...dB) VDS = 9 V; VG2nom = 4 V; idnom = 12 mA; fw = 50 MHz; funw = 60 MHz; Tamb = 25 C. Fig.11 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values (see Fig.18). 1997 Dec 08 6 Philips Semicond...
Description N-channel dual-gate MOS-FETs
File Size 145.32K  /  16 Page

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    BTS3205N

Infineon Technologies AG
Part No. BTS3205N
OCR Text ...RDS(ON,amb typ) RDS(ON,hot max) idnom(min) ID EAS 42 V1) 10 V 0.7 1.9 350 mA 600 mA2) 65 mJ Type BTS3205N Data Sheet Package PG-SOT-223-4 3 Marking 3205N Rev. 1.0, 2008-09-25 Smart Low-Side Power Switch BTS3205N Overview ...
Description Smart Low-Side Power Switch
File Size 264.35K  /  21 Page

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    BF1109 BF1109R BF1109WR

Philips Semiconductors
Part No. BF1109 BF1109R BF1109WR
OCR Text ...dB) VDS = 9 V; VG2nom = 4 V; idnom = 12 mA; fw = 50 MHz; funw = 60 MHz; Tamb = 25 C. Fig.11 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values (see Fig.18). 1997 Dec 08 6 Philips Semicond...
Description N-channel dual-gate MOS-FETs
File Size 144.83K  /  16 Page

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For idnom Found Datasheets File :: 7    Search Time::2.734ms    
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