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INFINEON[Infineon Technologies AG]
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| Part No. |
SPD04N80C3
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| OCR Text |
...e SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 2) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 3) Tsold...10V, ID =2.5A, Tj=25C Tj=150C
Drain-source on-state resistance RDS(on)
Gate input resistance
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| Description |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor
Cool MOS?/a> Power Transistor
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| File Size |
249.87K /
11 Page |
 View
it Online |
Download Datasheet
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPD04N50C3
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| OCR Text |
...d SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 2) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electric...10V, ID=2.8A, Tj=25C Tj=150C
Drain-source on-state resistance RDS(on)
Gate input resistance
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| Description |
for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor
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| File Size |
257.64K /
11 Page |
View
it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SPD03N50C3
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| OCR Text |
...d SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 2) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s Electric...10V, ID=2A, Tj=25C Tj=150C
Drain-source on-state resistance RDS(on)
Gate input resistance
R... |
| Description |
for lowest Conduction Losses & fastest Switching
Cool MOS Power Transistor
Cool MOS& Power Transistor
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| File Size |
259.54K /
11 Page |
View
it Online |
Download Datasheet |
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ST Microelectronics
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| Part No. |
HCF4049UM013TR
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| OCR Text |
...r both "1" and "0" level is: 1v min. with v dd =5v, 2v min. with v dd =10v, 2.5v min. with v dd =15v symbol parameter test condition value unit v i (v) v o (v) |i o | ( m a) v dd (v) t a = 25c -40 to 85c -55 to 125c min. typ. max. min. max... |
| Description |
HEX BUFFER/CONVERTERS
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| File Size |
128.72K /
8 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics
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| Part No. |
STM6916
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| OCR Text |
... suface mount package.
symbol min typ max units bv dss 30 v 1 i gss 100 na v gs(th) v 10 m ohm v gs =10v , i d =5a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =24v , v gs =0v v ... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
133.94K /
7 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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