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  mje13003 Datasheet PDF File

For mje13003 Found Datasheets File :: 34    Search Time::1.281ms    
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    MJE13003

KEC(Korea Electronics)
Part No. mje13003
OCR Text mje13003 2006. 6. 30 1/1 marking specification to-126 package revision no : 2 1. marking method laser marking or ink marking. 2. marking mje13003 2 601 k r 1 3 4 no. item marking description 1 kec k kec corp. 2 device name mje13003 mje130...
Description TO-126 PACKAGE

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    MJE13003 MJE13003G

ONSEMI[ON Semiconductor]
Part No. mje13003 mje13003G
OCR Text mje13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE appl...
Description SWITCHMODE TM Series NPN Silicon Power Transistor 300 AND 400 VOLTS 40 WATTS

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    MJE13003 13003BR MJE13002

Motorola, Inc
Part No. mje13003 13003BR MJE13002
OCR Text ... 1.5 3 89 9 MJE13002 * mje13003 * 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS mje13003 *Motorola Preferred Device 700 400 CASE 77-08 TO-225AA TYPE Order this document by MJE13002/D Wa...
Description 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS

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    MOTOROLA INC
Mospec Semiconductor, Corp.
Motorola, Inc.
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
Part No. mje13003 MJE13002 ON2007 13003BR
OCR Text ... 1.5 3 89 9 MJE13002 * mje13003 * 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS mje13003 *Motorola Preferred Device 700 400 CASE 77-08 TO-225AA TYPE Order this document by MJE13002/D Wa...
Description 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS 1.5安培NPN硅功率晶体管300000
GT 6C 3#4 3#16 PIN RECP
SEMICONDUCTOR TECHNICAL DATA
From old datasheet system

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    MJE13003

Savantic, Inc.
Part No. mje13003
OCR Text ...ing base Emitter DESCRIPTION mje13003 ABSOLUTE MAXIMUM RATINGS (TC=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM IE IEM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Coll...
Description Silicon NPN Power Transistors

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    MJE13003

Inchange Semiconductor Company Limited
Part No. mje13003
OCR Text ...ing base Emitter DESCRIPTION mje13003 Absolute maximum ratings (Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM IE IEM PD Tj Tstg IN Collector-base voltage Collector-emitter voltage PARAMETER Emitter-base voltage ...
Description Silicon NPN Power Transistors

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    MJE13003 MJE13003L-X-T60-F-K MJE13003-TO-126 MJE13003-X-T60-F-K

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UTC[Unisonic Technologies]
友顺科技股份有限公司
Unisonic Technologies Co., Ltd.
Part No. mje13003 mje13003L-X-T60-F-K mje13003-TO-126 mje13003-X-T60-F-K
OCR Text mje13003 NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE . 1 N...
Description NPN EPITAXIAL SILICON TRANSISTOR npn型外延硅晶体

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    MJE13003-D

ON Semiconductor
Part No. mje13003-D
OCR Text mje13003/d mje13003 switchmode series npn silicon power transistor these devices are designed for highvoltage, highspeed power switching inductive circuits where fall time is critical. they are particularly suited for 115 and 220 v switc...
Description SWITCHMODE Series NPN Silicon Power Transistor

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    Korea Electronics (KEC)
Part No. mje13003
OCR Text mje13003 triple diffused npn transistor revision no : 7 switching regulator application. high voltage and high speed switching application. features excellent switching times : t on =1.1 s(max.), t f =0.7 s(max.), at ...
Description Switching Transistor

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    MCC
Part No. mje13003
OCR Text mje13003 npn silicon plastic-encapsulate transistor features ? capable of1.5watts of power dissipation. ? collector-current 1.5a ? collector-base voltage 700v ? operating and storage junction temperature range: -55 o c to +150 o c electri...
Description NPN Silicon Plastic-Encapsulate Transistor

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For mje13003 Found Datasheets File :: 34    Search Time::1.281ms    
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