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Freescale Semiconductor
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| Part No. |
mrf18090bR3
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| OCR Text |
mrf18090b Rev. 7, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multi... |
| Description |
LATERAL N-CHANNEL RF POWER MOSFETs
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| File Size |
409.16K /
8 Page |
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Freescale (Motorola)
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| Part No. |
mrf18090bR3 mrf18090bSR3
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| OCR Text |
...bserved. order this document by mrf18090b/d motorola semiconductor technical data mrf18090br3 mrf18090bsr3 1.90 - 1.99 ghz, 90 w, 26 v lateral n - channel rf power mosfets case 465b - 03, style 1 ni - 880 mrf18090br3 case 465c - 02, style... |
| Description |
1.90–1.99 GHz, 90 W, 26 V Lateral N–Channel RF Power MOSFET
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| File Size |
551.78K /
8 Page |
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it Online |
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飞思卡尔半导体(中国)有限公司
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| Part No. |
mrf18090bSR3
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| OCR Text |
...l m3 (minimum) document number: mrf18090b rev. 7, 5/2006 freescale semiconductor technical data mrf18090br3 mrf18090bsr3 1.90 - 1.99 ghz, 90 w, 26 v lateral n - channel rf power mosfets case 465b - 03, style 1 ni - 880 mrf18090br3 case 46... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs 射频功率场效应晶体管N沟道增强型MOSFET的外
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| File Size |
385.00K /
8 Page |
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it Online |
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