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				NEC[NEC]
Part No.	2SA1010 2SA1010-AZ 2SA10102
OCR Text	...5.0 A, IB1 = -IB2 = -0.5 A, VBE(off) = 5.0 V, L = 180 H, clamped IC = -10 A, IB1 = -1.0 A, IB2 = -0.5 A, VBE(off) = 5.0 V, L = 180 H, clamped VCB = -100 V, IE = 0 VCE = -100 V, RBE = 51 , Ta = 125 C VCE = -100 V, VBE(off) = 1.5 V VCE = -100...
Description	Silicon transistor SILICON POWER TRANSISTOR 7 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB SC-46, 3 PIN
File Size	115.28K / 6 Page	View it Online	Download Datasheet

				WINGS[Wing Shing Computer Components]
Part No.	2SA1104
OCR Text	... PARAMETER Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltages DC current gain Transition frequency at f = 5MHz Collector capacitance at f = 1MHz On times T...
Description	Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION)
File Size	78.06K / 1 Page	View it Online	Download Datasheet

				Linear Technology
Part No.	LTC2952
OCR Text	... main functions: pushbutton on/off control of system power, ideal diode powerpath? controllers and system monitoring. the ltc2952s pushbutton input, which pro- vides on/off control of system power, has independently adjustable on and of...
Description	Pushbutton PowerPathTM Controller with Supervisor
File Size	293.24K / 30 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM6N48FU
OCR Text	...note 3) 16 ? ? v drain cut-off current i dss v ds = 30 v, v gs = 0 v ? ? 1 a gate leakage current i gss v gs = 12 v, v ds = 0 v ? ? 1 a gate threshold voltage v th v ds = 3 v, i d = 0.1 ma 0.8 ? 1.5 v forwa...
Description	Load Switching Applications
File Size	171.07K / 5 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	SSM6N40TU
OCR Text	... ? 9.5 ? switching time turn-off time t off v dd = 15 v, i d = 0.5 a v gs = 0 to 4 v, r g = 10 ? 9.0 ? ns drain-source forward voltage v dsf i d = -1.6 a, v gs = 0 v (note 2) ? -0.8 -1.2 v note 2: pulse ...
Description	Small-signal MOSFET 2 in 1
File Size	219.12K / 7 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NVD4815N
OCR Text	...test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss / t j 25 mv/ c zero gate voltage ...
Description	30 V, 35 A, Single N?Channel, DPAK/IPAK
File Size	150.08K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NVD4804N NVD4804NT4G NTD4804NT4G
OCR Text	...test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j 26 mv/ c zero gate voltage drain cur...
Description	Power MOSFET 30 V, 117 A, Single N?Channel, DPAK/IPAK
File Size	85.64K / 8 Page	View it Online	Download Datasheet

				SamHop Microelectronics
Part No.	SP3900
OCR Text	... 17 4.6 t d(on) 6 ns t r ns t d(off) ns t f ns v ds =10v,v gs =0v switching characteristics v dd =15v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i...
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
File Size	108.83K / 7 Page	View it Online	Download Datasheet

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