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rg-141 u Datasheet PDF File

For rg-141 u Found Datasheets File :: 196 Search Time::1.594ms
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				IRF[International Rectifier]
Part No.	GA100TS120u
OCR Text	... 60 80 100 120 140 160 RG , Gate Resistance (Ohm) TJ , Junction Temperature C ) ( Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 GA...
Description	HALF-BRIDGE IGBT INT-A-PAK 1200V ultraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
File Size	268.82K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA50TS120u
OCR Text	... 16 14 0 10 20 30 40 50 ( RG , Gate Resistance (Ohm)) 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switc...
Description	HALF-BRIDGE IGBT INT-A-PAK 1200V ultraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
File Size	208.85K / 10 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MGP20N60u
OCR Text	... VGE = 15 Vdc, L = 300 mH, Vd H RG = 20 , TJ = 125C) 125 C) Energy losses include "tail" (VCC = 360 Vd IC = 10 Ad Vdc, Adc, VGE = 15 Vdc, L ...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488 6 Motorola IGBTMGP20N60u...
Description	Insulated Gate Bipolar Transistor 31 A, 600 V, N-CHANNEL IGBT, TO-220AB
File Size	116.62K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MGP7N60E
OCR Text	...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT Thermal Resistance -- Junction to Ambient Maximum Le...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488 6 MGP7N60E/D Motorola IG...
Description	Insulated Gate Bipolar Transistor
File Size	118.28K / 6 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc] ON Semi
Part No.	MTP8N50E MTP8N50E_D ON2651 ON2650
OCR Text	..., PEAK IL = 8.0 Apk, L = 16 mH, RG = 25 W) Thermal Resistance - Junction-to-Case - Junction-to-Ambient Maximum Lead Temperature for Solderin...141 3.0 2.0 -- -- -- -- -- ns Vdc -- -- -- -- -- -- -- -- 15 33 40 32 40 8.0 17 17.3 50 72 150 60 64...
Description	From old datasheet system TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS(on) = 0.8 OHM
File Size	154.26K / 6 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STP10NK70Z STP10NK70ZFP
OCR Text	...ditions VDD = 350 V, ID = 4.5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 560V, ID = 9 A, VGS = 10V Min. Typ. 22 19 64 12 33 ...141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 ...
Description	N-CHANNEL 700 V - 0.75 OHM - 8.6 A TO-220/TO-220FP ZENER-PROTECTED SuPERMESH POWER MOSFET N-CHANNEL 700V - 0.75ohm - 8.6A TO-220/TO-220FP Zener-Protected SuperMESH⑩Power MOSFET N-CHANNEL 700V - 0.75ohm - 8.6A TO-220/TO-220FP Zener-Protected SuperMESHPower MOSFET N-CHANNEL 700V - 0.75ohm - 8.6A TO-220/TO-220FP Zener-Protected SuperMESH?Power MOSFET
File Size	382.71K / 10 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	STP11NC40 STP11NC40FP
OCR Text	...onditions VDD = 200 V, ID = 5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 320V, ID = 10 A, VGS = 10V Min. Typ. 15 18 32.5 6 1...141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 ...
Description	9.5 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-CHANNEL 400V - 0.44ohm - 9.5A TO-220/TO-220FP PowerMESH?II Power MOSFET N-CHANNEL 400V - 0.44ohm - 9.5A TO-220/TO-220FP PowerMESHII Power MOSFET N-CHANNEL 400V - 0.44ohm - 9.5A TO-220/TO-220FP PowerMESH⑩II Power MOSFET N-CHANNEL 400V 0.44 OHM 9.5A TO-220 / TO-220FP POWERMESH II POWER MOSFET
File Size	387.23K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA400TD60u
OCR Text	... 60 40 0 10 20 30 40 50 ( RG , Gate Resistance (Ohm) ) 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Swi...
Description	600V ultraFast 10-30 kHz Half-Bridge IGBT in a Dual INT-A-Pak package HALF-BRIDGE IGBT DuAL INT-A-PAK ultra-FastTM Speed IGBT
File Size	235.92K / 10 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
Part No.	STB6NC60-1 STB6NC60T4 STP6NC60FP P6NC60 STB6NC60 STP6NC60
OCR Text	...onditions VDD = 300 V, ID = 3 A RG = 4.7 VGS = 10 V (see test circuit, Figure 3) VDD = 480V, ID = 6 A, VGS = 10V Min. Typ. 16 14 35 5.5 17.2...141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 ...
Description	N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH?II MOSFET N-CHANNEL 600V 1.0 OHM - 6A - TO-220/TO220FP/I2PAK POWER MESH II MOSFET N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESHII MOSFET N-CHANNEL 600V 1.0 OHM - 6A - TO-220/TO220FP/I2PAK POWER MESH II MOSFET N-CHANNEL 600V - 1ohm - 6A TO-220/TO-220FP/I2PAK PowerMESH⑩II MOSFET N-CHANNEL Power MOSFET
File Size	362.93K / 10 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics] STMicroelectronics N.V.
Part No.	STP4NB30 STP4NB30FP
OCR Text	...nditions VDD = 150V, ID = 2.5 A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 240V, ID = 5 A, VGS = 10V Min. Typ. 9 9 12 7.5 3 16 Ma...141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 ...
Description	N-CHANNEL 300V 1.8 OHM 4A TO-220/TO-220FP POWERMESH MOSFET N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh?/a> MOSFET N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh MOSFET N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh⑩ MOSFET N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMeshMOSFET N沟道300V - 1.8ohm -A - TO-220/TO-220FP PowerMesh⑩MOSFET
File Size	330.41K / 9 Page	View it Online	Download Datasheet

For rg-141 u Found Datasheets File :: 196 Search Time::1.594ms
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