rg-210 u pdf Datasheet P1 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : HA252C3B AV2432B K3151 23151 GL3EG62 3130A 23151 PIC18F6
	Product Description
	Full Text Search

rg-210 u Datasheet PDF File

For rg-210 u Found Datasheets File :: 1411 Search Time::1.422ms
Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				IRF[International Rectifier]
Part No.	GA100TS120u
OCR Text	... 60 80 100 120 140 160 RG , Gate Resistance (Ohm) TJ , Junction Temperature C ) ( Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 GA...
Description	HALF-BRIDGE IGBT INT-A-PAK 1200V ultraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
File Size	268.82K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1302L IRF1302S
OCR Text	... VDD = 11V --- ID = 104A ns --- RG = 4.5 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S ...210 160 110 60 10 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Notes on Repeti...
Description	Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A? Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?) Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A) Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)
File Size	225.99K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1302
OCR Text	... VDD = 11V --- ID = 104A ns --- RG = 4.5 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S -...210 160 110 60 10 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Notes on Repeti...
Description	Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A? Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?) Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A) Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)
File Size	516.95K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF1310S
OCR Text	...- VDD = 50V --- ID = 25A ns --- RG = 9.1 --- RD = 2.0, See Fig. 10 Between lead, --- 6mm (0.25in.) nH from package --- and center of die con...210 1.2 V ns C Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)
File Size	319.11K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1607
OCR Text	... 38V 130 --- ID = 85A ns 84 --- RG = 1.8 86 --- VGS = 10V D Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contact S 7750 --- VGS = 0V 1230 --- pF VDS = 25V 310 --- = 1.0MHz, See Fig. 5 5770 --- VGS = 0V, ...
Description	Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)
File Size	179.50K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF2204
OCR Text	... VDD = 20V --- ID = 130A ns --- RG = 2.5 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S ...210 showing the A G integral reverse --- --- 850 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = ...
Description	40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package AuTOMOTIVE MOSFET
File Size	138.67K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF2805L IRF2805S
OCR Text	... VDD = 28V --- ID = 104A ns --- RG = 2.5 --- VGS = 10V T D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS...
Description	55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package AuTOMOTIVE MOSFET
File Size	221.43K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF360 IRF360-15
OCR Text	... VDS = 200V VDD =200V, ID =25A, RG =2.35 Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Cu...
Description	Repetitive Avalanche Ratings TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=0.20ohm/ Id=25A) TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A) 400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
File Size	138.60K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3703 IRF3703PBF
OCR Text	..., VGS = 10V --- ID = 76A ns --- RG = 1.8 --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- ...210 A --- 1000 0.8 80 185 1.3 120 275 V ns nC Conditions D MOSFET symbol showing the G integral r...
Description	30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A? Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A) Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?) Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
File Size	93.04K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710L IRF3710S
OCR Text	...- VDD = 50V --- ID = 28A ns --- RG = 2.5 --- RD = 1.7, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS =...210 320 ns TJ = 25C, IF = 28A --- 1.7 2.6 C di/dt = 100A/s Intrinsic turn-on time is negligible (tu...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.025ohm，身份证\u003d 57A条） Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A) Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)
File Size	180.61K / 10 Page	View it Online	Download Datasheet

For rg-210 u Found Datasheets File :: 1411 Search Time::1.422ms
Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |